Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Li, J.H; Xu, Yu; Tao, Jiahao; Cai, Xin; Wang, Yuning; Wang, Guobin; Cao, Bing; Xu, Ke

doi:10.1021/acs.cgd.3c00171

Cited by 4 publications

(3 citation statements)

References 30 publications

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“…However, the GaN epitaxial layer retained the ELOG mode, which implied the disappearance of graphene was a gradual process. 24) The cross-sectional TEM image reveals the evolution of GaN dislocations as shown in Fig. 3(b).…”

Section: Resultsmentioning

confidence: 99%

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Tao,

Xu,

et al. 2024

Jpn. J. Appl. Phys.

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The use of two-dimensional material like graphene to alleviate lattice mismatch has been an effective way to realize high-quality GaN on heterogeneous substrates. The lack of hanging bonds on the graphene surface provides a new attempt for epitaxial lateral overgrowth (ELOG). In this study, a hexagonal graphene mask was used for the growth of GaN, the graphene mask disappeared during the GaN growth process, but GaN still maintained the ELOG mode, and the threading dislocation density was significantly reduced. Raman and PL spectra demonstrated the stress relaxation in ELOG GaN and showed a stress relaxation of 0.157 GPa at the interface between the substrate and ELOG GaN. This study demonstrates the feasibility and advantages of graphene masks for nitrides and extends the research on stress relaxation of ELOG GaN using a graphene mask.

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Section: Resultsmentioning

confidence: 99%

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Tao,

Xu,

et al. 2024

Jpn. J. Appl. Phys.

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“…Therefore, CNAS is competitive with traditional substrates for directly growing low-stress GaN films. With the recent development of new technologies such as the buffer layer, 41 epitaxial lateral overgrowth, 42 van der Waals epitaxy, 43 and remote epitaxy, 44 it is possible to grow stress-free GaN films on the CNAS substrate in the future work.…”

Section: Structure Characterization Of Gan Films On Cnasmentioning

confidence: 99%

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Wang,

Xu,

Wang

et al. 2023

Crystal Growth & Design

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Langasite (La 3 Ga 5 SiO 14 , LGS) family crystals are known for their piezoelectric properties, which make them widely applicable in surface acoustic wave (SAW) devices. The group-III metal nitrides formed on LGS substrates are found to enable significant extension of SAW devices to higher-frequency ranges. However, the Ga element in LGS crystals is observed to volatilize in H 2 at high temperatures, forming Ga droplets and degrading the film quality. This study reports the growth of GaN films on the Ga-free LGS-type crystal Ca 3 NbAl 3 Si 2 O 14 (CNAS) by metal−organic chemical vapor deposition (MOCVD), and the CNAS is stable in MOCVD. The as-grown GaN films are continuous and smooth with a roughness of 0.369 nm. The epitaxial relationship between GaN and CNAS is GaN(0001)//CNAS(0001) and GaN(10−12)//CNAS(21−32). The mixed dislocations are found to be dominant type of dislocations of the GaN films on CNAS. The GaN films also exhibit good optical properties and a compressive stress of 0.17 GPa. Thus, the results indicate that the Ga-free LGS-type crystals have great potential for applications in the epitaxial growth of GaN materials.

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“…Epitaxial growth of high-quality crystalline films by using various patterned substrate geometries has become a prevalent method. Furthermore, researchers have investigated the growth of GaN thin films on patterned sapphire with a silica array. , To increase the quality of GaN thin films, Li et al used metal–organic chemical vapor deposition to epitaxial lateral overgrowth of GaN thin films on patterned graphene masks/GaN templates. Kwak et al conducted a study examining the impact of surface pits in AlN substrates on the GaN thin films.…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Mao,

Gao,

et al. 2024

Crystal Growth & Design

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Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become increasingly prevalent across microelectronics, optoelectronics, and nanotechnology as a method for thin-film growth. Gaining insights into the process of thin-film growth can significantly enhance the device performance. Herein, molecular dynamics was used to simulate GaN thin film growth on substrates with different patterned surfaces. Results showed that GaN thin films grown on cone- and dome-patterned substrate surfaces have smoother surfaces than those grown on a flat substrate. Moreover, the GaN thin films grown on flat surfaces exhibited an optimal crystalline quality compared to those grown on patterned substrate surfaces. However, the GaN thin films grown on flat surfaces showed strain levels higher than those grown on patterned substrate surfaces, potentially affecting the performance of the optoelectronic devices. This study reveals the impact of different patterned substrate surfaces on GaN thin films and provides guidance on the design of substrate patterns for different GaN thin film application scenarios.

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Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Cited by 4 publications

References 30 publications

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

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