Study on optimizing the performance of infrared detectors using material chip technology

Abstract

Using material chip technology, large area n-on-p planar junctions with various boron implantation doses have been fabricated on an Hg 1−x Cd x Te (x = 0.291) film, similarly grown using molecular beam epitaxy, for the mid-infrared wavelength range. The current-voltage characteristics of p-n junctions have been measured on a cold stage at 77 K and an optimized ion implantation dose has been discovered. Zero bias resistance of all the junctions has been calculated and shows distinct dependence upon the boron implantation doses.

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

“…Details of the fabrication procedures can be found elsewhere. 13,14 The detector array was then mounted into a dewar with the ability to vary temperature from 60 K to 120 K. The direct-current (DC) dark current-voltage characteristics were measured with zero field of view (FOV) at different temperatures, using a laboratory-assembled setup consisting of an IEEE-488 bus, HP4140B picoammeter, and Keithley 263 voltage source.…”

Modeling of dark characteristics for long-wavelength HgCdTe photodiode

“…This approximation appears in the same form as the Boltzmann's approximation, and is applicable to both analytic and numerical device simulation models. The measured R-V characteristics of MCT photodiodes can be modeled with a combination of diffusion mechanism (R diff ), generation-recombination mechanism (R gr ), trap-assisted tunneling mechanism (R tat ), and bandto-band tunneling mechanism (R bbt ) Ajisawa and Oda (1995); Gopal et al (2003); Nguyen (2004); Gumenjuk-Sichevskaya and Suzov (1999). These mechanisms are relevant to the built-in potential V bi , intrinsic carrier concentration n i and intrinsic Fermi level E i calculated from Equation (1) (Quan et al in press & online, 2006a).…”

“…HgCdTe (Mercury Cadmium Telluride, MCT) photodiodes have been one of the most important infrared detectors for its high performance and technical maturity Chen et al (2003); . Either current-voltage (I-V) or resistance-voltage (R-V) characteristics are a standard measurement to quantify an infrared detector's performance.…”

“…Either current-voltage (I-V) or resistance-voltage (R-V) characteristics are a standard measurement to quantify an infrared detector's performance. So that it is important to quantitatively analyze I-V or R-V curves to obtain device parameters and to reveal the roles of different physical mechanisms in MCT photodiodes Gilmore et al (2005). MCT is a narrow bandgap semiconductor that exhibits a non-parabolic conduction band and high carrier degeneracy.…”

A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification

“…Details of the conventional standard techniques can be found in elsewhere. 3,11,12 The in-situ CdTe surface passivation technique refers to the process flow of the hybrid surface passivation without the high-density hydrogen plasma modification. The main improvements of the hybrid technique are: (1) the in situ deposited CdTe is not entirely removed and HgCdTe surface remains unexposed to the air during the device fabrication; and (2) a low energy hydrogen plasma is used to modify the damage after the B þ implantation step with inductively coupled plasma (ICP) enhanced RIE instrument.…”