Study on permanent deactivation of the light-induced degradation in p-type compensated crystalline silicon solar cells

Xiao, Chengquan; Yu, Xuegong; Yang, Deren; Que, Duanlin

doi:10.1016/j.solmat.2013.05.025

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…After regeneration treatment, the electrical performance of B-doped Cz-Si solar cells can nearly be recovered, and especially, they possess an anti-LID ability under solar cell working conditions. Thereafter, effectiveness of the regeneration reaction of B-O defects has been confirmed in B-doped Cz-Si wafers [1,2] and even in p-type compensated Cz-Si solar cells [6], and the regeneration treatment has been regarded as an effective way to suppress or eliminate the LID of B-doped Cz-Si solar cells [4].…”

Section: Introductionmentioning

confidence: 99%

In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

Yuan

Ding

et al. 2022

International Journal of Photoenergy

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In order to investigate the light-induced-degradation (LID) and regeneration of industrial PERC solar cells made from different positions of silicon wafers in a silicon ingot, five groups of silicon wafers were cut from a commercial solar-grade boron-doped Czochralski silicon (Cz-Si) ingot from top to bottom with a certain distance and made into PERC solar cells by using the standard industrial process after measuring lifetimes of minority carriers and concentrations of boron, oxygen, carbon, and transition metal impurities. Then, the changes of their I - V characteristic parameters (efficiency η , open-circuit voltage V oc , short-circuit current I sc , and fill factor FF ) with time were in situ measured by using a solar cell I - V tester during the 1st LID (45°C, 1 sun, 12 h), regeneration (100°C, 1 sun, 24 h), and 2nd LID (45°C, 1 sun, 12 h). The results show that the LID and regeneration of the PERC solar cells are caused by the transition of B-O defects playing a dominant role together with the dissociation of Fe-B pairs playing a secondary role. The decay of η during the 1st LID is caused by the degradation of V oc , I sc , and FF , while the increase of η during the regeneration is mainly contributed by V oc and FF , and the decay of η during the 2nd LID is mainly induced by the degradation of I sc . After regeneration, the decay rate of η reduces from 4.43%–5.56% (relative) during the 1st LID to 0.33%–1.75% (relative) during the 2nd LID.

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Section: Introductionmentioning

confidence: 99%

In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

Yuan

Ding

et al. 2022

International Journal of Photoenergy

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“…The general trend found by lim et al [18) saying that regeneration is slowed down by increasing boron concentrations can be con firmed. This is what one would expect if the regeneration of BO defects can be explained by mobile hydrogen atoms passivating the recombination active defects because boron is known to trap hydrogen (31 and many others).…”

Section: Resultsmentioning

confidence: 55%

From simulation to experiment: Understanding BO-regeneration kinetics

Wilking

Forster²,

Herguth

et al. 2015

Solar Energy Materials and Solar Cells

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a b s t r a c tRegeneration of boron oxygen related defects is investigated in differently compensated silicon wafers. It is shown for the first time that boron oxygen defects can be transformed into a stable regenerated state also in compensated n type silicon.The coupling between regeneration rate and the completeness of the regeneration reaction is simulated based on the 3 state model of BO defects. Maximum regeneration temperatures that can be applied are determined for differently regenerating samples. The results are used to develop a high speed process that can accelerate regeneration by two orders of magnitude without compromising neither the completeness of the regeneration process nor the stability of the resulting high minority carrier lifetime values.

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“…It was demonstrated that the initial degradation of solar modules seemed to be influenced by the silicon feedstock (in this case SoG-UMG) used in wafer production; while the long term degradation mechanisms seemed not to be [192]. LID could be permanently deactivated for SoG-UMG [193]. Furthermore, uneven distribution of dopants has been shown to have a remarkable effect on the residual stress and therefore breakage [194].…”

Section: Gap Analysismentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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Study on permanent deactivation of the light-induced degradation in p-type compensated crystalline silicon solar cells

Cited by 6 publications

References 18 publications

In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

From simulation to experiment: Understanding BO-regeneration kinetics

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

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