Study on reactive sputtering to deposit transparent conductive amorphous In2O3–ZnO films using an In–Zn alloy target

Hybrid co-deposition of mixed-valent molybdenum–germanium oxides (MoxGeyOz): A route to tunable optical transmission

“…Methods used for depositing mixed oxides include the use of alloyed targets [41][42][43][44][45], affixing strips of various materials to the target surface [15,[17][18][19], and co-deposition using multiple sources [46][47][48][49]. While each of these methods is capable of depositing uniform, high quality thin films, co-deposition was selected for use within this study.…”

Crystallization behavior during transparent In2O3‐ZnO film growth

“…Because no phases of zinc or its oxides were detected in the IZO films, the lateral diffusion of In and O adatoms is considered to be of critical importance. ( In‐situ analyses show that the flux of In‐related radicals, such as InO 2^− (), is at a negligible level compared with that of In and O atoms during the sputtering process.) The kinetic energies of sputtered In and O from the target were estimated to be approximately 2–5 eV by Monte Carlo simulations using the transport of ion in matter (TRIM) code ().…”

“…( In‐situ analyses show that the flux of In‐related radicals, such as InO 2^− (), is at a negligible level compared with that of In and O atoms during the sputtering process.) The kinetic energies of sputtered In and O from the target were estimated to be approximately 2–5 eV by Monte Carlo simulations using the transport of ion in matter (TRIM) code (). Compared with our experimental results, such incident energy does not seem to induce the obvious crystallization behavior because no crystallization phenomenon was observed at 150 °C.…”

Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

“…Generally, the oxide films deposited by conventional DC sputtering contain numerous structural defects generated by high-energy particles during deposition, such as O − bombardment (with several hundreds of eV of energy) on the growing film surface. [36][37][38][39][40][41][42] However, in the case of reactive GFS, sputtered W atoms are transported by the forced Ar stream to the substrate, where they react with O 2 molecules to form WO 3 on the substrate. In this case, there are no high-energy particles available to generate structural defects.…”