Study on spin-splitting phenomena in the band structure of GdN

Vidyasagar, R.; Kitayama, Shinya; Yoshitomi, Hiroaki; Sakurai, Takahiro; Ohta, H.

doi:10.1063/1.4727903

Cited by 26 publications

(17 citation statements)

References 24 publications

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“…The effective barrier height for GdN in our devices is much lower than for the Eu chalcogenides — of the order of tens of mV (see Figure b). This is consistent with the emerging understanding of the electronic properties of GdN, which are those of a highly doped (possibly degenerate) semiconductor with a comparatively low bandgap . Nevertheless, it is important to stress that all the devices discussed in this paper show low sub‐gap conductance when measured below T S , which confirms that the conductance is dominated by direct tunneling .…”

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confidence: 86%

Electric‐Field‐Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions

et al. 2013

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confidence: 86%

Electric‐Field‐Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions

et al. 2013

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“…In fact, there have been many successful precedents. [42][43][44][45] For a FM semiconductor like EuO, electric and magnetic properties are extremely sensitive to spin state configurations. Calculated spin-dependent spectrum, together with detailed energy difference analysis, are necessary and adopted for FM EuO to research electron transitions among orbits.…”

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confidence: 99%

Spin-dependent optical response of multiferroic EuO: First-principles DFT calculations

et al. 2014

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Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a way to obtain the spin-dependent optical response of the magnetic materials, which is helpful to verify the spin-dependent band structure of EuO. Significantly different optical responses from spin-up and spin-down channels are obtained in both linear and nonlinear cases, making it possible to distinguish contributions from different spin-channels in the optical absorption spectra if spin-flip process can be neglected. In addition, the red-shift of the absorption edge from paramagnetic to ferromagnetic ordering is explained by exchange interactions. Using such method, we have also compared the optical properties of multiferroic EuO which is induced by strong epitaxial strain. Our results show that from tensile to compressive strain, the blue-shift of the leading absorption peaks in the optical spectra, the red-shift of the optical band gap in spin-up state can be observed, consistent to the energy difference between spin-splitting orbits. The spin-dependent nonlinear optical properties reveal that in the infrared and visible light region, the contributions to second-harmonic generation (SHG) susceptibilities are mainly from spin-majority channels. In addition, the strain effect is also discussed. With the increase of epitaxial strain, the larger energy shift of the leading absorption peaks, and the more remarkable nonlinear optical response can be obtained.

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“…Ferromagnetic semiconductor is, perhaps, a single material expected to produce both semiconducting and ferromagnetic properties due to the standpoint of coupling effects between the optical and spin polarization [1][2]. Notably, GdN is considered as an inherent ferromagnetic semiconductor, a partially strongly correlated system with a ground state of 8 S 7/2 4f configuration involving zero orbital angular momentum.…”

Section: Introductionmentioning

confidence: 99%