Study on sulfur diffusion in CuInSe2 thin films using two thermal profiles

Chalcogenisation of Cu–Sb metallic precursors into Cu3Sb(SexS1−x)3

“…Looking at the behaviour of similar chalchogenide compounds, it was expected that sulpho-selenides of Cu-Sb metallic precursors would exhibit energy bandgap values lower than the corresponding sulphides, as in the case of CuSb(Se,S)2, CuIn(Se,S)2, Cu(InGa)(S,Se)2 and Cu2ZnSn(Se,S)4 [14,[21][22][23]. In order to reduce the energy bandgap of Cu3SbS3, a combined selenisation and sulphurisation experiment was performed.…”

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

“…Additionally, one gets the impression that the layer thickness (see figure 4.73 (b,d)) of the thin film is reduced under S in excess, which can be explained by the evaporation of certain Se-species. This behavior is also described in [161] where a two-step mechanism of S incorporation is introduced in a way that at first a chalcogen exchange reaction of the solid-gas interface occurs, followed by an S diffusion in and Se diffusion out of the film. .…”