Study on the crack phenomenon of heavy FeS-doped Ib diamond crystals with {111} surface as growth surface in Fe–Ni–C system

Fang, Shuai; Ma, Hongan; Cai, Zheng Hao; Wang, Chun Xiao; Fang, Chao; Zhao, Zhan Dong; Lu, Zhi Yun; Wang, Yong Kui; Chen, Liangchao; Jia, Xiaopeng

doi:10.1039/c9ce01759c

Cited by 18 publications

(6 citation statements)

References 37 publications

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“…Infrared spectroscopy is commonly utilized to provide information about impurity elements and defect types in diamonds . The nitrogen element and carbon element are adjacent to each other, and their atomic radius is similar .…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Liu,

Wang,

et al. 2023

Crystal Growth & Design

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Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Liu,

Wang,

et al. 2023

Crystal Growth & Design

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“…Filiform defects did not affect the C–C bond vibrations in diamond. The FTIR peaks at 1130 cm –1 , 1344 cm –1 , and 2688 cm –1 were attributed to isolated nitrogen (C-center nitrogen) in diamond. − The C-center nitrogen concentration in diamond could be estimated by the following formula: − where μ is the corrected coefficients and can be determined by following formula: where A is the absorption intensity of the relevant peaks in the FTIR spectra. The concentration of nitrogen in diamonds obtained from E-2, E-4 to E-6 was estimated to be 264, 260, 237, and 246 ppm, respectively, with about 10% uncertainty.…”

Section: Resultsmentioning

confidence: 99%

Defect and Stress Reduction in High-Pressure and High-Temperature Synthetic Diamonds Using Gradient Cooling Technology

Chen

Zhang

et al. 2020

Crystal Growth & Design

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In order to eliminate filiform defects in high-pressure and high-temperature synthetic diamonds, we have developed a gradient cooling technology and applied it during the synthesis assembly cooling process used during the later stage of diamond synthesis. Finite element simulations showed that the von Mises stress at the end of the synthesis process varied greatly inside the diamond. The rapid thermoelastic stress relief and higher thermoelastic stress generated inside the diamond during rapid cooling of synthesis assembly were the root causes of filiform defects, which were completely eliminated from the diamond interior at a gradient cooling time of 300 min. Raman measurements indicated that the crystalline quality was higher and the compressive stress was lower in the diamond obtained using gradient cooling technology than in the diamond obtained using the traditional rapid cooling technology. This work improves the understanding of the origin of filiform defects in diamond and also provides an effective method for obtaining high-quality diamonds.

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“…The error of N c obtained in this way is less than 5%. [9,37,38] N c (ppm) = µ(1130 cm −1 )/µ(2120 cm −1 ) × 5. (…”

Section: Infrared Spectramentioning

confidence: 99%

Effects of MgSiO₃ on the crystal growth and characteristics of type-Ib gem quality diamond in Fe–Ni–C system*

Wang

Fang

et al. 2020

Chinese Phys. B

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We report the effects of MgSiO3 addition on the crystal growth and characteristics of type-Ib diamonds synthesized in Fe–Ni–C system. The experiments were carried out with pressure at 5.5 GPa, temperature at 1385 °C–1405 °C, and duration of 23.1 h. As MgSiO3 increases from 0.0 wt% to 3.0 wt%, the diamond growth temperature increases from 1385 °C to 1405 °C, the addition of MgSiO3 and the movement of P–T diagram toward the higher temperature direction result in a series of effects to the Fe–Ni–C system and crystal growth. Firstly, it increases the content of metastable recrystallized graphite and accelerates the competition with the carbon source needed for diamond growth, thus causing the decreased crystal growth rate. Diamond crystals exhibit the combination form of {111}, {100}, {113}, and {110} sectors, the decreased {100} and {113} sectors, dominated {111} sector are all attributed to the higher growth rate in [100] direction caused by the synergy of MgSiO3 and the movement of P–T diagram. The higher growth rate in [100] direction also increases the metal catalyst and graphite inclusions and leads to the increase of residual tensile stress on the crystal surface. Accompanying with the high growth rate, a higher dissolution rate along [100] and [113] directions than [111] direction occurs at the microstructure and forms the significantly developed (111) stepped growth layer. In addition to the movement of P–T diagram, the addition of MgSiO3 poisons the catalyst and increases the nitrogen content of diamond from 120 ppm to 227 ppm.

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Study on the crack phenomenon of heavy FeS-doped Ib diamond crystals with {111} surface as growth surface in Fe–Ni–C system

Abstract: Herein, the characteristics of heavy FeS-doped diamond crystals were studied using a China-type large volume cubic high-pressure apparatus (CHPA) with FeNi alloy as the catalyst at 6.0–6.5 GPa and 1350–1400 °C.

Cited by 18 publications

References 37 publications

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Defect and Stress Reduction in High-Pressure and High-Temperature Synthetic Diamonds Using Gradient Cooling Technology

Effects of MgSiO₃ on the crystal growth and characteristics of type-Ib gem quality diamond in Fe–Ni–C system*

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Study on the crack phenomenon of heavy FeS-doped Ib diamond crystals with {111} surface as growth surface in Fe–Ni–C system

Abstract: Herein, the characteristics of heavy FeS-doped diamond crystals were studied using a China-type large volume cubic high-pressure apparatus (CHPA) with FeNi alloy as the catalyst at 6.0–6.5 GPa and 1350–1400 °C.

Cited by 18 publications

References 37 publications

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Defect and Stress Reduction in High-Pressure and High-Temperature Synthetic Diamonds Using Gradient Cooling Technology

Effects of MgSiO3 on the crystal growth and characteristics of type-Ib gem quality diamond in Fe–Ni–C system*

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Product

Resources

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Effects of MgSiO₃ on the crystal growth and characteristics of type-Ib gem quality diamond in Fe–Ni–C system*