Study on the effect of temperature on electrical and photovoltaic parameters of lead-free tin-based Perovskite solar cell

Influence of SWCNT on the Electrical Behavior of an Environmentally Friendly CH3NH3SnI3 Perovskite-Based Optoelectronic Schottky Device

“…To study the I – V relationship, it has been considered that the charge conduction at the metal oxide–semiconductor junction is due to the thermionic emission (TE) effect. To explore the charge transport phenomena, eq is considered , I = I 0 true[ normalexp ( q V m k T ) − 1 true] where V , m , q , k , and T are the applied bias voltage, the ideality factor, the electronic charge, the Boltzmann constant, and the operating temperature in kelvin, respectively. The reverse saturation current I 0 extracted from the straight-line intercept of ln I at V = 0 can be expressed by Richardson–Schottky TE theory as I 0 = A e f A * T 2 exp true( prefix− q ϕ normalb 0 k T true) where ϕ b0 is the barrier height (BH) at the junction, A ef is the effective area of the Schottky diode, which is 3.6 × 10 –5 m 2 , and A * represents the effective Richardson constant.…”

“…To study the I−V relationship, it has been considered that the charge conduction at the metal oxide− semiconductor junction is due to the thermionic emission (TE) effect. To explore the charge transport phenomena, eq 5 is considered 6,24…”

Correlation in Structural Architecture toward Fabrication of Schottky Device with a Series of Pyrazine Appended Coordination Polymers

“…The I – V representative of the composite-based device has been investigated using thermionic emission (TE) theory (eq ) using an applied bias voltage ( V ), electronic charge ( q ), ideality factor ( r ), Boltzmann constant ( k ), and operating temperature ( T ). I = I 0 true[ normalexp ( q v r k T ) − 1 true] The reverse saturation current, I 0 , of TE theory was expressed (eq ) with an effective area of Schottky diodes ( A , 9 × 10 –6 m 2 ), an effective Richardson constant ( A *, 1.20 × 10 6 A K –2 m –2 ), and barrier height (ϕ b ) at the junction. I = A A * T 2 exp true( prefix− q ϕ b k T true) From the intercept of ln I at V = 0, the reverse saturation current was extracted. The temperature dependence ideality factor ( r ) is expressed in eq . Γ = q k T true[ d v d ( ln ⁡ l ) true] Eq is used to obtain the temperature-dependent BH (ϕ b ) at zero bias. ϕ b = k T q ln true( A A * T 2 …”

“…The I−V representative of the composite-based device has been investigated using thermionic emission (TE) theory (eq 4) 50 using an applied bias voltage (V), electronic charge (q), ideality factor (r), Boltzmann constant (k), and operating temperature (T).…”

Numerical optimization and performance evaluation of ZnPC:PC70BM based dye-sensitized solar cell

“…The ideality factor can be determined experimentally by measuring the current–voltage characteristics of the DSSC and fitting the data to the equation 57 , 58 : where I is the current, I 0 is the saturation current, q is the elementary charge, V is the voltage, N is the ideality factor, k is the Boltzmann constant, and T is the temperature. The ideality factor can be obtained from the slope of the plot of Ln(I) vs V, and it quantifies how many charge carriers recombine during this procedure.…”