Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD

Abstract

Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X‐ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatment (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)