Study on the Impacts of Hole Injection and Inclusion of Sub-Oxide and Metallic Si Atoms on Repeatable Resistance Switching of Sputter-Deposited Silicon Oxide Films

Ōmura, Yasuhisa; Yamaguchi, Rintaro; Sato, Shigeo

doi:10.1109/tdmr.2017.2756260

Cited by 8 publications

(21 citation statements)

References 31 publications

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“…This study reports the results of Monte Carlo simulations of various device structures, some of which were used in the author's prior experiments [18]- [20]. The device structures assumed in this paper are shown in Figure 1 [18]- [20], where Figure 1(a) shows the device having a stack of Au/silicon oxide/n-Si substrate (called device A, control device), Figure 1(b) shows the device having a stack of Au/silicon oxide/n-type -FeSi2/n-Si substrate (called device B), Figure 1(c) shows Hf/Au/silicon oxide/n-Si substrate (called device C), and Figure 1(d) shows Hf/Au/silicon oxide/n-type -FeSi2/n-Si substrate (called device D). Devices B, C, and D are considered here in order to illuminate the impact of the high-energy fraction of electrons injected from the electrode.…”

Section: Device Structure Simulatedmentioning

confidence: 99%

“…Device A is the control device used in the experiment to demonstrate that a simple bias condition fails to yield reliable unipolar switching [18], [20]. Device B is the test structure used in the experiment to demonstrate that unipolar switching and bipolar switching can be easily realized [19].…”

Section: Device Structure Simulatedmentioning

confidence: 99%

“…Our previous papers [18]- [20] suggested that hot electrons injected from the Si substrate significantly contributed to the stable resistive switching of sputter-deposited silicon oxide films. Accordingly, this paper details how important the injection of high-energy electrons is in establishing resistive switching.…”

Section: Monte Carlo Simulations and Physcal Models 31 Fundamental Assumptions For Monte Carlo Simulationsmentioning

confidence: 99%

“…The author's previous paper demonstrated that hot-electron injection from the Si substrate had the potential to trigger resistive switching from sputter-deposited Si oxide films [18]; the stack of -FeSi2/Si substrate with the conduction-band energy offset of 0.2 eV was used as the bottom electrode [19]. However, it did not definitively elucidate why unipolar switching is infrequent in sputterdeposited silicon oxide films [20], [21], even though it is not a transition-metal oxide.…”

Section: Introductionmentioning

confidence: 99%

“…This paper carries out semi-two-dimensional (S2D) Monte Carlo simulations on the resistive switching of sputter-deposited silicon oxide films [21], [22], [28], [29] in order to elucidate the importance of carrier energy in switching. Although Monte-Carlo-based studies have already been performed to analyze the switching behavior of various metal oxide films [21], [30]- [32] with verification by experiments [18]- [20], [26], few have targeted sputter-deposited silicon oxide films [21], [23] and the impact of hot-electron injection on resistive switching has not been discussed so far. This paper focuses on how the initial carrier energy influences the resistive switching behavior of silicon oxide films.…”

Section: Introductionmentioning

confidence: 99%

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Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

Ōmura

2021

IJEECS

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<p>This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and fermi-level difference are utilized. Support is found for the predictions that hot-electron injection reduces the switching voltage and this should reduce the dissipation energy of switching. It is predicted that two-layer metal stacks can significantly reduce the number of oxygen vacancies in the sputter-deposited silicon oxide film after the reset process. It is also demonstrated that, in unipolar switching, the number of E’ or E” centers of the sputter-deposited silicon oxide film is relatively large.</p>

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Section: Device Structure Simulatedmentioning

confidence: 99%

Section: Device Structure Simulatedmentioning

confidence: 99%

Section: Monte Carlo Simulations and Physcal Models 31 Fundamental Assumptions For Monte Carlo Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

Ōmura

2021

IJEECS

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Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

Wiśniewski

Mazurak

Jaśiński

et al. 2023

Solid-State Electronics

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Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Omura,

Mallik

2023

Journal of Applied Physics

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This paper proposes a physics-based model based on possible chemical processes responsible for the resistive switching of sputter-deposited silicon oxide films. Diffusion–reaction differential equations are utilized to pursue physical and chemical origins of the switching phenomenon. Based on the theoretical model, the chemical reaction process is analytically and numerically solved, and an analytical model is proposed to elucidate the phenomenon. Theoretical simulation results are examined from the point of view of suitability of parameter values, and the analytical model is used to interpret the simulation results. Simulation results greatly assist in understanding the switching processes of silicon oxide films; that is, the diffusion processes of hydrogen and water molecules primarily rule the switching processes, and the displacement of oxygen atoms is assisted by those processes. The analytical model predicts that high-speed switching requires a large number of traps in the oxide, a relatively large binding energy, and a low leakage current; all of them can easily be satisfied for sputter-deposited oxide films. A combination of the theoretical simulation model and the analytical model gives a guideline of how the sputter-deposited silicon oxide films can be made suitable for high-speed resistive switching applications.

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Study on the Impacts of Hole Injection and Inclusion of Sub-Oxide and Metallic Si Atoms on Repeatable Resistance Switching of Sputter-Deposited Silicon Oxide Films

Cited by 8 publications

References 31 publications

Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

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