2021
DOI: 10.1021/acsaem.1c00284
|View full text |Cite
|
Sign up to set email alerts
|

Study on the Ion Substitution Mechanism of CsPbIBr2 Films Prepared by a Drop-Coating Method

Abstract: In this paper, the ion substitution mechanism of CsPbIBr 2 films prepared by a drop-coating method is studied. CsI/ CsBr methanol solution is drop-coated on a CsPbIBr 2 precursor film to prepare the CsPbIBr 2 perovskite film. After drop-coating, it is found that the color of the perovskite film changes with CsI/ CsBr methanol solution drop-coated on the perovskite precursor film. When CsBr methanol solution is drop-coated on a CsPbIBr 2 precursor film, the color of the obtained CsPbIBr 2 film is orange. The co… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(4 citation statements)
references
References 38 publications
0
4
0
Order By: Relevance
“…This is one of the highest efficiencies for all-inorganic CsPbIBr 2 -based PSCs reported to date (Fig. 3c and Table S2) [29][30][31][32][33][34][35][36][37][38][39][40][41][42]. Furthermore, the distribution of statistical parameters from 20 devices for each case in Fig.…”
Section: Resultsmentioning
confidence: 70%
“…This is one of the highest efficiencies for all-inorganic CsPbIBr 2 -based PSCs reported to date (Fig. 3c and Table S2) [29][30][31][32][33][34][35][36][37][38][39][40][41][42]. Furthermore, the distribution of statistical parameters from 20 devices for each case in Fig.…”
Section: Resultsmentioning
confidence: 70%
“…[19] Beyond that, a smaller ideality factor n of 1.43 also demonstrates that trap-assisted recombination is effectively suppressed in VALT-CsPbIBr 2 PSCs versus that of HT-CsPbIBr 2 ones (1.98). [52] Furthermore, the trap-state densities (N t ) of optimized devices were investigated via devices with the structure of ITO/ZnO/ CsPbIBr 2 /PCBM/Ag according to the space charge-limited current (SCLC) method. In general, the J-V curves of the abovementioned devices present three different regions, where the linear part in the lower voltage and the nonlinear section in the larger voltage correspond to the ohmic contact region and trap-filled region, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…[ 19 ] Beyond that, a smaller ideality factor n of 1.43 also demonstrates that trap‐assisted recombination is effectively suppressed in VALT‐CsPbIBr 2 PSCs versus that of HT‐CsPbIBr 2 ones (1.98). [ 52 ]…”
Section: Resultsmentioning
confidence: 99%
“…In addition, several novel strategies have also been attempted to fabricate CsBX 3 , such as annealing process optimization, [37,130,[166][167][168][169] spray-coating process, [170,171] intermediate phase assisted sequential deposition, [172] gradient cooling process, [173] benign pinholes, [162] light-processing technology, [159] substrate optimization (moth-eye antireflector and muscovite), [174,175] fluxmediated crystal growth strategy, [176] drop-coating method, [177] halide exchange, [178] direct molecule substitution, [179] ambient environment fabrication, [117,180] phase transition induced method, [131] two-step infiltration-spinning method, [181] mist deposition method, [182] hybrid CVD (HCVD), [183] single-source electron beam evaporation, [183,184] UV-ozone post-treatment, [185] air blowing recipe, [186] two-step sintering (TSS) method, [133] electrodeposition, [187] hot-flow-assisted spin-coating approach, [39] intermolecular exchange strategy, [188] hot-pressing method, [189] and so on.…”
Section: Fabrication Technique Optimizationmentioning
confidence: 99%