Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Abstract

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

Surface chemistry models for low temperature Si epitaxy process simulation in a single-wafer reactor

“…Using reactor scale simulations, effects of process parameters on thin film thickness can be investigated, with film thickness uniformity being a good measure for film quality. 3 Silicon epitaxy using SiCl 2 H 2 (dichlorosilane, DCS) has been investigated before, but low temperature chemistry models (T , 700 C) are not available. Kastelic et al 4 proposed a simple empirical equilibrium model containing one reversible surface reaction [Eq.…”

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

“…The conducted analysis showed that the reactor geometry is of crucial importance to the high uniformity of thin-film layer deposition. Subsequent studies focused on specific apparatus constructions from small laboratory size solutions, suitable for processing 3 in wafers [17,[20][21][22][23][24][25] up to big, rotating disk or planetary constructions designed for more than 40 2-in substrates [15,[26][27][28][29][30]. The researchers investigated the geometry and shape of reactor chambers [15,25,27] with special emphasis placed on the distance between the inlet and the susceptor, the gas injection systems [22,26,31,32] responsible for proper chemical species delivery, as well as the operating parameters of the growth process [15,16,29,33].…”

Numerical Analysis of an Inline Metal-Organic Chemical Vapour Deposition Process Based on Sliding-Mesh Modelling

“…Computational fluid dynamics (CFD) modelling on transport phenomena of complex reactor geometry with the consideration of reaction kinetics has garnered great attention in recent years. For instance, Li et al [11][12][13] carried 2 of 16 out a series of studies in three-dimensional model, focusing on the flow and temperature filed, parameter optimization, reaction kinetics model and deposition rate in commercial MOCVD reactor. Tang et al [14], Li and Xiao [15] analysed the transport phenomena in an industry-scale 96-rod CVD reactor and siemens reactor.…”