Study on the Pulse Phase Lag Effect on Two Mask Holes During Plasma Etching

Zhang, Peng

doi:10.1007/s13538-021-00939-y

Cited by 2 publications

(1 citation statement)

References 42 publications

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“…As continuous wave (CW) plasma reacts with a consistent ion flux on a wafer surface, it is difficult to attain these aspects with CW plasma. Many researchers subsequently found that pulse-modulated plasma can meet the above requirements [17][18][19][20][21][22]; despite such findings though, an understanding of the effects of pulse-modulated plasma, namely the detailed plasma parameters and how they influence surface reactions on the wafer, has remained unclear.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Cho

You

Kim³

et al. 2021

Materials

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Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.

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