Study on the Raman scattering measurements of Mn ion implanted GaN

Zhang, Y.H.; Guo, Liping; Shen, Wei

doi:10.1016/j.mseb.2006.03.014

Cited by 15 publications

(9 citation statements)

References 25 publications

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“…The introduction of Pd increases the interatomic distance, which in turn shifts the vibrational peak positions to lower frequencies. We have attempted to make an approximate estimation of the frequency shift for the first-order peaks in NiPdSi samples from the mass change point of view 15 due to the presence of 10% Pd in Ni film,…”

Section: Room-temperature Raman Measurementsmentioning

confidence: 99%

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Karabko

Достанко

Kong

et al. 2009

Journal of Applied Physics

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We have demonstrated the effective Raman spectroscopy for the phase transition and phonon dynamics of NiPdSi films annealed at various temperatures. In addition to the appearance of alloy disorder-induced Raman peaks, we have shown that the presence of Pd in NiSi results not only in the retardation of NiSi2 phase transition to about 900 °C, but also in the redshift (∼3–4 cm−1) of the first-order Raman peaks. The observed Raman frequency downshift with increasing temperature can be described well by a model which has taken into account the contributions of the anharmonic, thermal expansion, and strain effects, revealing the dominant role of the phonon decay. Effects of Pd addition and annealing temperature on the Raman frequency and linewidth have been discussed. The introduction of Pd is found to reduce the Raman frequency downshift, demonstrating the favorable use of NiPdSi for microelectronics applications.

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Section: Room-temperature Raman Measurementsmentioning

confidence: 99%

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Karabko

Достанко

Kong

et al. 2009

Journal of Applied Physics

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“…On one hand such frequency shift could be analyzed by mass approximation approach x new ¼ x initial ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi l initial =l new p , where l initial , l newthe weighted mean mass of the compound and x initial , x new -Raman shift of initial and new phase, respectively. 26 In fact, if we assume the composition of the observed new phase to be a mixture of 75% CoSi þ 25% NiSi (Fig. 4, x ¼ 0.25) and 50% CoSi þ 50% NiSi (Fig.…”

Section: Resultsmentioning

confidence: 98%

Extensive Raman spectroscopic investigation of ultrathin Co1−xNixSi2 films grown on Si(100)

Piao¹,

Zhu²,

Gao³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ultrathin silicide films were formed by starting from 1–8 nm thick Co1−xNix (x = 0, 0.25, 0.5, 0.75, and 1) at 350 °C–900 °C. For each composition x, there exists a critical thickness above which the transition temperature from monosilicides CoSi and NiSi to a disilicide-like phase increases with increasing film thickness. Below this thickness, the disilicide phase seems to form without exhibiting the monosilicides within the detection resolution limits of transmission electron microscopy and Raman spectroscopy. Raman spectroscopic analysis seems to indicate that Ni could be dissolved in the CoSi lattice to a certain fraction despite the fact that CoSi and NiSi are distinct with different crystallographic structures. Moreover, the disorder-induced Raman scattering in NiSi2 is found to be enhanced by Co incorporation. The observed annealing behaviors are attributed to variations in free energy change for phase transition caused by differences in metal thickness.

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“…Adicionalmente, se observan el modo 2TO (Г) de GaAs situado en 532 cm -1 . Resultados similares han sido reportados en capas de GaN dopadas con Mn [25].…”

Section: Espectroscopía Ramanunclassified

Segregación de Mn en películas delgadas de GaAsMn obtenidas mediante pulverización catódica

et al. 2020

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RESUMEN Actualmente, la fabricación de películas delgadas de GaAs dopadas con Mn (GaAsMn) sobre Si (100), es un objeto de gran interés debido a su posible integración con la tecnología del silicio, generando un desarrollo significativo en la funcionalidad de los dispositivos optoelectrónicos y espintrónicos. En este trabajo, presentamos un estudio sistemático de la caracterización estructural, morfológica, óptica, y magnética de películas delgadas de GaAsMn preparadas por pulverización catódica R.F sobre un substrato de silicio (100), para temperaturas del crecimiento de 100 y 200 oC, respectivamente. A partir de los espectros Raman se identificaron los modos vibracionales, trasversal óptico (TO) y longitudinal óptico (LO) de GaAs, localizados en 290 cm-1 y 265 cm-1, respectivamente. Adicionalmente, se identificaron modos vibracionales de MnAs, debido a la substitucion de átomos de Ga por átomos de Mn en altas concentraciones. La segregación de Mn, fue corroborada mediante difracción de rayos-X, en donde se evidencian planos cristalinos en las direcciones (400) y (200) de GaAs policristalino, y planos cristalográficos pertenecientes a fases de Mn1+xAs. La morfología y el modo de crecimiento de las películas delgadas de GaAsMn/Si (100), se llevó a cabo mediante imágenes de microscopía de fuerza atómica (AFM) y microscopía electrónica de barrido (SEM) tomadas sobre la superficie y en sección transversal, respectivamente. Finalmente, un análisis de las propiedades magnéticas de las películas delgadas de GaAsMn a partir de imágenes de microscopía de fuerza magnética (MFM), revelan la presencia de dominios magnéticos superficiales provenientes de MnAs. Concluimos que las propiedades físicas de las películas de GaAsMn dependen de las condiciones de crecimiento.

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Study on the Raman scattering measurements of Mn ion implanted GaN

Cited by 15 publications

References 25 publications

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Extensive Raman spectroscopic investigation of ultrathin Co1−xNixSi2 films grown on Si(100)

Segregación de Mn en películas delgadas de GaAsMn obtenidas mediante pulverización catódica

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