Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
Xiaohu Wang,
Xuefeng Zheng,
Danmei Lin
et al.
Abstract:In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer of 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both the drain current and gate current increase during the irradiation. With the increasing drain bias, the device burns out eventually. Technology computer-aided design simulation was used to expl… Show more
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