Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Abstract

The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the self-heating effect (SHE) in ultra-thin body fully depleted (UTB-FD) SOI MOSFETs are presented to investigate the influences of impurity, free and bound electrons, and boundary reflection effects on heat diffusion mechanisms. The thermal conductivities of thin silicon films with different parameters, including temperature, depth, thickness and doping concentration, are discussed in detail. The results show that the thermal dissipation associated with the impurity, the free and bound electrons, and especially the boundary reflection effects varying with position due to phonon scattering, greatly suppressed the heat loss ability of the nanoscale ultra-thin silicon film. The predictive power of the thermal conductivity model is enhanced for devices with sub-10-nm thickness and a heavily doped silicon layer while considering the boundary scattering contribution. The absence of the impurity, the electron or the boundary scattering leads to the unreliability in the model prediction with a small coefficient of determination.

Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

“…Silicon-based FET biosensing technologies face challenges, such as the degradation of device electrostatic properties as oxide layer erodes in aqueous environment [5]. Additionally, these FETs suffer from impurity scattering as well as self-heating effects, which cause reliability issues [6]. Moreover, silicon is susceptible to chemical and biological reactions, which leads to metallization of the gate and increases the sensing area to channel distance, resulting in lower sensitivity [7].…”

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

“…Fully depleted silicon-on-insulator (FDSOI) technology has been developed to overcome the short-channel effect. The low in-plane thermal conductivity of ultrathin top Si layers in FDSOI devices also intensifies the SHE [14]. The transition from planar metal-oxide-semiconductor field-effect transistors (MOSFET) to fin-field effect transistor (FinFETs) and gate-all-around field-effect transistor (GAAFET) technologies could significantly improve the performance of transistors.…”