Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application

Jang, Tae Ho; Kim, Kyungdo; Yoo, Min-Soo; Kim, Yong-Taik; Cha, Seon-Yong; Jeong, Jae-Goan; Lee, Seok-Hee

doi:10.1109/irps.2014.6860602

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…However, the precursor proposed for the ALD process in this study contains only carbon, oxygen, nitrogen, and hydrogen atoms in ligands without halide components. Therefore, problems caused by byproducts containing halogen species generated in the ALD reaction, such as surface corrosion of substrates or equipment, and deterioration of the previously integrated device performances by generating defects due to halogen element diffusion, can be prevented. , Moreover, IM-02 has a liquid phase at room temperature, which easily provides sufficient vapor pressure. The temperature-dependent vapor pressure, thermogravimetric analysis (TGA), and differential thermal analysis (DTA) curves of IM-02 are shown in Figure b and c. As the temperature increases, the vapor pressure of IM-02 increases steadily, and it has a vapor pressure of about 0.18 Torr at 70 °C, which is sufficient for vapor deposition.…”

Section: Resultsmentioning

confidence: 99%

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Kim²,

Choi

et al. 2022

Chem. Mater.

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As memory devices become ultraminiaturized, the increase in the resistance of the metal line due to the decrease in the line width has become a very critical issue. Mo-based materials have been studied as candidates for next-generation metal line materials because of their low resistivity at low thickness and excellent oxidation resistance. However, the development of precursors suitable for vapor deposition methods (such as atomic layer deposition) is immature. In this study, we propose an ultralow-resistivity MoC x thin film using a cyclopentadienyl-based precursor as a new metal line candidate. Using a halogen-free liquid precursor, MoC x thin films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) in a wide process window of 200–300 °C. We confirmed that uniform and continuous films were deposited on the SiO2 substrates without any significant incubation period. The most important result of this study is that as-deposited MoC x thin films exhibited an ultralow resistivity of 8–20 μΩ·cm, and such ultralow resistivity was maintained even with a thickness as thin as 4.25 nm and after rapid thermal annealing up to 600 °C. This is the lowest resistivity value of the reported metal line candidate materials available at the sub-10 nm device scale level. The ultralow resistivity at a very thin thickness and excellent thermal stability suggest the possibility that the MoC x thin films proposed in this study can be applied in various applications as a next-generation metal line material in the semiconductor industry.

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Section: Resultsmentioning

confidence: 99%

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Kim²,

Choi

et al. 2022

Chem. Mater.

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“…4,5 Furthermore, an n-MOSFET with a W buried-gate structure in DRAM below 20 nm has been introduced to overcome the shortchannel effect. 6 Such W buried-gate n-MOSFETs and W wiring and plugs have been fabricated through nanometer-scale W film deposition on a buried gate with a trench structure and a metal line and plug with a damascene structure, followed by W-film chemical-mechanical-planarization (CMP). In particular, the critical parameters of the W-film CMP performance are a higher polishing rate for the bulk W film, the polishing rate selectivity between the W and SiO 2 films and a barrier layer such as a TiN film, a complete lack of dishing and erosion of the remaining W film after CMP, and less abrasive adsorption on the surface of the remaining film.…”

mentioning

confidence: 99%

Interfacial Chemical and Mechanical Reactions between Tungsten-Film and Nano-Scale Colloidal Zirconia Abrasives for Chemical-Mechanical-Planarization

Seo

Bae

Kim

et al. 2020

ECS J. Solid State Sci. Technol.

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In tungsten (W) film chemical-mechanical-planarization (CMP), the chemical and mechanical reaction behaviors of the W film surface play a critical role in the CMP performance, as determined by oxidation (i.e.,WO3), corrosion (i.e., WO4 2−), and the electrostatic force at the interface between abrasives and the surface. Unlike a conventional catalyst (i.e., Fe(NO3)3) for a Fenton reaction in a CMP slurry, a new catalyst ((i.e., potassium ferric oxalate: K3Fe(C2O4)3)) and a new nano-scale (i.e., 23 nm in diameter) abrasives (i.e., Zirconia:ZrO2) provides specific CMP performance behavior: the maximum W-film polishing rate and a corrosion-free surface are achieved at a specific catalyst concentration (0.03 wt%), and the number of remaining abrasives adsorbed on the W film surface after CMP decreases with increasing concentration of the K3Fe(C2O4)3. These CMP performance characteristics are associated with the following results: (i) The degrees of two different CMP mechanisms (oxidation-dominant or corrosion-dominant) determine the corrosion-free surface of W film. (ii) The dependency of the electrostatic force at the interface between abrasives and the film on the K3Fe(C2O4)3 concentration determines the polishing rate. Finally, (iii) the zeta potential distribution at the interface between the abrasives and the film directly affects the number of remaining abrasives on the surface after CMP.

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Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure

Jung,

Min,

2024

IEEE Access

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Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application

Cited by 5 publications

References 4 publications

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Interfacial Chemical and Mechanical Reactions between Tungsten-Film and Nano-Scale Colloidal Zirconia Abrasives for Chemical-Mechanical-Planarization

Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure

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