2018
DOI: 10.32947/ajps.v18i2.481
|View full text |Cite
|
Sign up to set email alerts
|

Study the Annealing Effect on Electrical properties of (As0.5Se0.5) doped With Tellurium

Abstract: During this work, the study of electrical properties of (As0.5Se0.5 doped with 1%Te) thin films which prepared by thermal vacuum evaporation on glass substrate bases at room temperature with (100±20)nm thickness, deposition rate (1.6nm/s) and study effect of annealing at temperatures (Ta) (348,398 and448)K for (30min) on these properties. The X-ray diffraction pattern showed that all prepared films have amorphous structure. The electrical measurements explain that D.C. conductivity increases as annealing tempe… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 12 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?