Study the best ratio of S and Se in CZTSSe solar cells with nontoxic buffer layer

Zhang, Wenchao; Tang, Jiyu; Niu, Yuhang; Huang, Rui; Chen, Long; Jiang, Meng-Yin

doi:10.1063/5.0046648

Cited by 17 publications

(6 citation statements)

References 42 publications

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“…The shunt and series resistances were kept fixed at 1000 Ω and 1.5Ω, respectively during the entire simulation. The values of various parameters of the devices are taken from already reported works [13], [14], [15], [16], [17] and a few by reasonable assumptions as listed in Table 1…”

Section: Simulation Methodologymentioning

confidence: 99%

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Thomas

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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CZTSSe based photovoltaic devices are gaining attention recently. They have many favorable properties like less costly and simple manufacturing processes, comparably nontoxic and easily available constituent components, and most importantly, excellent optoelectronic properties. Herein, we propose a CZTSSe based solar cell and aim to report for the first time a new material for the buffer layer: Zirconium Sulphide (ZrS2). The suggested device here is Al-doped ZnO(AZO)/ZrS2/CZTSSe/Mo. Here we use a numerical simulation package called Solar Cell Capacitance Simulator or SCAPS 1-D to analyze the output of the device with varying input parameters. To explore the impact of the ZrS2 layer on the functioning of the suggested device,its donor density was changed from 1012 cm−3 to 1016 cm−3. The simulations indicate that the donor density doesn’t particularly affect the output parameters of the device within the tested range. Besides the influence of the ZrS2 layer, a study was also carried out to find the role of operating temperature and the intrinsic layer on the proposed device. Most of the parameters declined rapidly with the increase in temperature while they remain constant with the change in ZnO thickness. Efficiency dropped to 9% at 500K from 23 % at 300K and the efficiency of the device remained 23% with the variation of intrinsic layer thickness. As per the simulation results, we can conclude that ZrS2 is an appropriate material as buffer layer for photovoltaic devices with a CZTSSe absorber layer.

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Section: Simulation Methodologymentioning

confidence: 99%

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Thomas

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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“…Al:ZnO [4] i-ZnO [4] CdS [5] CZTS [5] CZTSSe [5] Thickness( m Table 2. Buffer candidate's materials properties Parameters MoO 3 [6] WO 3 [7] ZnS [8] TiO 2 [7] In 2 S 3 E.g.…”

Section: Parametersmentioning

confidence: 99%

Improved performance of Cd-free CZTS thin-film solar cells by using CZTS_0.4Se_0.6 BSF layer

Zhang

You²,

Dan³

et al. 2023

J. Phys.: Conf. Ser.

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Cu2ZnSnS4 (CZTS) thin film solar cells (TFSCs) have received great attention from the solar cell industry for their environment, price, high absorption coefficient and great electronic properties. This work provides a strategy to prompt the photoelectric conversion efficiency (η) of CdS/CZTS-based TFSCs via introducing the back surface field (BSF) layer and wxAMPS to simulate the results. Meanwhile, the optimum ratio of sulfur to selenium in the BSF layer material CZTSSe has been also studied, and a new device structure has been constructed. Beneficial from the introduction of CZTSSe as a BSF layer, the interface recombination is suppressed and leads to an enhanced Voc. Subsequently, MoO3, ZnS, WO3, TiO2 and In2S3 as candidates to substitute for the toxic Cd buffer layer are investigated. The results demonstrate that In2S3/CZTSSe exhibits the best performance with 28.59 % and 0.99 V, ascribed to a superior spike-like value. It was found that the presence of a spike-like conduction band (CB) at the In2S3/CZTSSe interface and a more suitable conduction band offset (CBO) value could suppress the interfacial complexation. Therefore, In2S3 performs best as a buffer layer material. However, due to the cost of indium, this paper recommends the utilization of wide bandgap semiconductor materials MoO3 and ZnS, which also have good stability and conversion efficiencies that can reach 28.38% and 28.41%, respectively. The work of this paper provides important guidance for researchers to manufacture CZTS TFSCs.

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“…Enayati Maklavani et al (2020) proposed a structure based on CZTSe/CZTS, achieving an increased device efficiency of 15.98% by enhancing the CZTSe thickness and carrier concentrations in the CZTSe and CZTS layers [19]. Zhang et al (2021) generated and simulated a CZTSSe-based solar cell using various buffer layers, resulting in a high PCE of 23.9% and identifying In 2 S 3 as a promising alternative to CdS [20]. Woo-Lim Jeong et al (2021) successfully implemented luminescent down-shifting (LDS) layers of quantum dots (QDs) based on CZTSSe PV cells, attaining a notable 7.3% efficiency of power conversion below a 1.0 ml QD condition [21].…”

Section: Introductionmentioning

confidence: 99%

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

Yadav,

Chauhan,

Mishra

et al. 2023

Phys. Scr.

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This study focuses on optimizing the performance of CZTSSe photovoltaic (PV) cells by incorporating an Ag2S quantum dot (QD) buffer layer. CZTSSe, with its significant Direct bandgap (1–1.5 eV) and the absorption coefficient (>104 cm-1), shows promise for efficient visible-range light absorption. Ag2S quantum dots, known in terms of their favourable attributes, such as high absorption, low solubility, and minimal surface recombination, are explored as a buffer layer material. The effects of the Ag2S quantum dot (QD) buffer layer on the optical and electrical characteristics of CZTSSe photovoltaic (PV) cells are comprehensively examined using simulation characterization. Key parameters, including Short-circuit (JSC), fill factor (FF), open-circuit voltage (VOC), and power conversion efficiency (PCE), are analyzed to validate device characteristics.The SCAPS-1d simulator is employed for performance assessment and enhancement through tuning device parameters such as energy bandgap, absorber layer thickness, buffer layer thickness, defect density, and acceptor concentrations of the absorber and hole transport layer (HTL), and donor concentrations of the buffer. Additionally, temperature, as well as series-shunt resistance's influence on device effectiveness, are explored. The study aims to maximize light absorption, enhance charge conduction, reduce carrier loss due to recombination, and upgrade CZTSSe PV cells' overall performance. The CZTSSe solar unit achieves its highest PCE of 27.56% when employing an Ag2S buffer layer and Cu2O hole transport layer. The study provides valuable knowledge about the optimization of CZTSSe solar cells and the potential benefits of utilizing Ag2S QD in the role of buffer layer material. This research contributes to the understanding of enhancing CZTSSe PV cell performance through the incorporation of Ag2S QD buffer layers and presents pragmatic directives that can be employed to facilitate the progression of CZTSSe-based photovoltaic devices.

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Study the best ratio of S and Se in CZTSSe solar cells with nontoxic buffer layer

Cited by 17 publications

References 42 publications

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Improved performance of Cd-free CZTS thin-film solar cells by using CZTS_0.4Se_0.6 BSF layer

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

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Study the best ratio of S and Se in CZTSSe solar cells with nontoxic buffer layer

Cited by 17 publications

References 42 publications

Numerical Study on the Effect of ZrS2 on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS2 on CZTSSe Photovoltaic Device Using SCAPS 1-D

Improved performance of Cd-free CZTS thin-film solar cells by using CZTS0.4Se0.6 BSF layer

Investigating Ag2S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

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Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Improved performance of Cd-free CZTS thin-film solar cells by using CZTS_0.4Se_0.6 BSF layer

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance