2014
DOI: 10.1134/s1995078014010029
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Studying the resolving power of nanosized profiling using focused ion beams

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Cited by 14 publications
(3 citation statements)
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“…In this case, FIB allows to form planar anode and cathode in a single technological cycle [21][22][23][24][25]. Other mask technology is more labor intensive, it requires the use of specialized templates, more time, additional photolithography operations and hinders the formation of nanosized elements based on graphene/SiC.…”
Section: Experiments and Resultsmentioning
confidence: 99%
“…In this case, FIB allows to form planar anode and cathode in a single technological cycle [21][22][23][24][25]. Other mask technology is more labor intensive, it requires the use of specialized templates, more time, additional photolithography operations and hinders the formation of nanosized elements based on graphene/SiC.…”
Section: Experiments and Resultsmentioning
confidence: 99%
“…Material removal by ion beam milling and FIBinduced chemical vapour material deposition can be used for the fabrication of structures with micro-and nanoscale dimensions. The key feature of FIB is the high spatial resolution which is provided by the application of a gallium ion beam 7 nm in diameter, as well as by the possibility of varying the impact of the parameters over wide limits [4]. In contrast to conventional fabrication techniques based on optical lithography with the application of photoresist and material processing a direct writing mode by FIB allows precise nanopatterning even on sample with advanced topography [5].…”
Section: Introductionmentioning
confidence: 99%
“…17 The minimal size of nanoisland can reach down to 10 nm at 5 keV and 0.4 nA ion beam. [18][19][20] In our case, nanoislands composed of two BFO domains were prepared in several steps summarized in supplementary material [SM-I]: (i) passivation of BFO film by aluminum (Al) layer, (ii) chemical vapor deposition using FIB for growth of tungsten (W) matrix as a mask, (iii) FIB etching of W/Al/BFO structure down to SRO bottom electrode and (iv) removal of the Al layer in ultrasonic bath.…”
mentioning
confidence: 99%