Selective control of the switching path in multiferroics such as BiFeO3 (BFO) is one of the main challenge for the design of non-volatile memories based on magnetoelectric coupling. Here, we demonstrate an alternative way to control binary states of ferroic orders (ferroelectric or ferroelastic) using an array of BFO nanoislands exhibiting two ferroelectric domains. The study of electronic transport properties and domain orientations using atomic force microscopy (AFM) based techniques enabled us to determine electric and mechanical parameters at which ferroelectric and ferroelastic resistive switching can be observed. Ferroelastic switching was associated with a symmetry-breaking induced by electromechanical coupling between the AFM tip and the BFO thin film. It led to out-ofplane polarization pinning that allows performing only in-plane switching accompanied with nucleation and propagation of a conductive domain wall. Nanoislands exhibited binary states of high (OFF) and low resistance (ON) controlled by the tip contact force and the external electric field, without scaling effect (down to 50 nm). High performance characteristics with up to 10 4 OFF/ON ratio, good endurance and retention characteristics were evidenced. Binary states of different ferroic orders with selective control of switching mechanisms by flexoelectric effect can find potential application in non-volatile memory with multilevel data storage capacity.