The monolithic integration of rare-earth-doped waveguide amplifiers with passive photonic devices has long been a subject of extensive research. Herein, we propose a method for active-passive monolithic integration based on polymer photonic integrated devices. The monolithic integration of passive devices with active waveguide amplifiers is achieved by spin-coating an active layer atop a passive polymer waveguide and subjecting specific regions of the active layer to selective photolithography. To validate the proposed monolithic integration scheme's impact on the performance of passive devices, performance tests were conducted on both passive and active-passive integrated 8-channel arrayed waveguide grating (AWG) devices. The crosstalk (CT) of the AWG devices before and after adding the active layer ranged from −12.04 dB to −14.72 dB and from −10.02 dB to −14.88 dB, respectively, with channel spacings of 9.29 nm and 8.80 nm, indicating consistent performance of the passive devices with the addition of the active layer. In a 0.5 cm-long active waveguide, internal net gain was achieved across all eight channels of the AWG, with a gain bandwidth ranging from 1518 nm to 1580 nm. Notably, an internal net gain of 9.5 dB was attained at 1527 nm. The successful integration of rare-earth-doped waveguide amplifiers with passive components on a monolithic chip has been achieved for the first time, requiring only two straightforward photolithography steps. This milestone not only preserves the inherent functionality of passive components but also enables effective signal amplification. This technological innovation holds the promise of fully harnessing the potential of rare-earth-doped waveguide amplifiers in the realm of photonic integrated circuits, thereby catalyzing significant breakthroughs and advancements in the field of optoelectronics.
