Sub-1 ns characterization methodology for transistor electrical parameter extraction

Qu, Yiming; Chen, Bing; Liu, Wei; Han, Jiefei; Lu, Jiwu; Zhao, Yi

doi:10.1016/j.microrel.2018.03.022

Cited by 14 publications

(15 citation statements)

References 16 publications

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“…Using a microwave probe to apply signals with good fidelity, a continuous train of pulses is applied and the average current is measured with an SMU, gate pulses drain current pulses SMU average value A pulse generator Fig. 7.17 Illustration of the concept and apparatus for the pulse-train measurement technique [13]. <© [2019] IEEE.…”

Section: Pulse-train Methodsmentioning

confidence: 99%

“…<© [2019] IEEE. Reprinted, with permission, from Ref [13]> which might have an external filter attached. The average DC current measured this way is the average of the off-state and on-state current, so it equals the DC current times the duty cycle of the current pulses.…”

Section: Pulse-train Methodsmentioning

confidence: 99%

“…7. 13 Illustration of the evolution of the drain current pulse in a floating body SOI nFET when the first pulse is applied after a very long off-time [8] time scales: impact ionization at the drain which almost instantaneously produces charge in the body, and recombination at the source, which slowly decreases the body charge. From data like these it is possible to gain a quantitative understanding of such mechanisms, and the visualization of these currents in an oscilloscope can be very helpful in understanding the dynamic behavior of the transistor.…”

Section: ~10 Ns Timementioning

confidence: 99%

“…A dual-pulse measurement system is shown in Fig. 7.16 [13]. An arbitrary waveform generator is used to produce two independent, but synchronized, waveforms to drive the gate and drain of an FET.…”

Section: ~10 Ns Timementioning

confidence: 99%

See 3 more Smart Citations

Measurement of the Transient Response of Transistors

Jenkins

2021

RF and Time-Domain Techniques for Evaluating Novel Semiconductor Transistors

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All transistors are potentially subject to transient response effects where the electrical output of the transistor immediately after a change in its input differs from its output after that input has been held in a steady-state or DC condition for a relatively long time. Most well-established conventional semiconductor transistors have small or negligible transient effects, but novel transistors may be subject to quite large effects. This is not just an inconvenience for modeling or designing circuits. A transient response which is very different from the steady-state response might suggest that the transistor is far superior, or inferior, when used in transient operation than it is in DC operation. Digital computing circuits, it is noted, depend entirely on transient operation.This chapter describes several techniques to measure transient response and compare it to DC behavior. The techniques rely on the application of fast edges and short pulses to the input of the transistor, and a number of methods are shown by which the response to the input can be measured on a useful time scale.

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Section: Pulse-train Methodsmentioning

confidence: 99%

Section: Pulse-train Methodsmentioning

confidence: 99%

Section: ~10 Ns Timementioning

confidence: 99%

Section: ~10 Ns Timementioning

confidence: 99%

See 2 more Smart Citations

Measurement of the Transient Response of Transistors

Jenkins

2021

RF and Time-Domain Techniques for Evaluating Novel Semiconductor Transistors

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“…This specially designed probe has a 50 termination between the signal and ground connections in order to minimize the signal reflection on the DUT's gate by impedance matching. Then the drain voltage and current could be extracted from the captured output voltage [20]- [22]. The DUTs in this study were fabricated with a commercial ready sub-20 nm technology.…”

Section: Methodsmentioning

confidence: 99%

Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast V th measurement (FVM) technique. It is found that the NBTI behaviors in terms of V th shift is strongly influenced by the measurement speed even in the nano-second scale (ns-scale). The measurement phase itself during the NBTI characterization could bring in an additional V th shift (V th) or V th recovery. From the ns-scale characterization results in different stress and temperature, it is shown that the rapid recoverable components of NBTI should be attributable to the rapid hole trapping/detrapping, which are related to the defects with time constants of ns-scale. INDEX TERMS pFinFETs, reliability, NBTI, ultra-fast measurement.

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Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method*

Zhang¹,

Cheng²,

Ni³

et al. 2019

Chinese Phys. B

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Thermal conductivity is an important material parameter of silicon when studying the performance and reliability of devices or for guiding circuit design when considering heat dissipation, especially when the self-heating effect becomes prominent in ultra-scaled MOSFETs. The cross-plane thermal conductivity of a thin silicon film is lacking due to the difficulty in sensing high thermal conductivity in the vertical direction. In this paper, a feasible method that utilizes an ultra-fast electrical pulse within 20 μ s combined with the hot strip technique is adopted. To the best of our knowledge, this is the first work that shows how to extract the cross-plane thermal conductivity of sub-50 nm (30 nm, 17 nm, and 10 nm) silicon films on buried oxide. The ratio of the extracted cross-plane thermal conductivity of the silicon films over the bulk value is only about 6.9%, 4.3%, and 3.8% at 300 K, respectively. As the thickness of the films is smaller than the phonon mean free path, the classical heat transport theory fails to predict the heat dissipation in nanoscale transistors. Thus, in this study, a ballistic model, derived from the heat transport equation based on extended-irreversible-hydrodynamics (EIT), is used for further investigation, and the simulation results exhibit good consistence with the experimental data. The extracted effective thermal data could provide a good reference for precise device simulations and thermoelectric applications.

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Sub-1 ns characterization methodology for transistor electrical parameter extraction

Cited by 14 publications

References 16 publications

Measurement of the Transient Response of Transistors

Measurement of the Transient Response of Transistors

Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method*

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Sub-1 ns characterization methodology for transistor electrical parameter extraction

Cited by 14 publications

References 16 publications

Measurement of the Transient Response of Transistors

Measurement of the Transient Response of Transistors

Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method*

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Product

Resources

About

Sub-1 ns characterization methodology for transistor electrical parameter extraction