2009
DOI: 10.1116/1.3182742
|View full text |Cite
|
Sign up to set email alerts
|

Sub-10-nm nanolithography with a scanning helium beam

Abstract: Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
91
0

Year Published

2010
2010
2020
2020

Publication Types

Select...
9
1

Relationship

3
7

Authors

Journals

citations
Cited by 130 publications
(91 citation statements)
references
References 22 publications
0
91
0
Order By: Relevance
“…For example, a block copolymer pattern with a periodicity of 18 nm could be achieved by templating a 16 kg mol À 1 PS-b-PDMS block copolymer 16 using a square post array with a periodicity of 18 nm and double posts with a post spacing of 12 nm. This resolution is difficult to achieve with electron-beam lithography, but similar resolution has been achieved by helium-ion beam lithography 34 and scanning transmission electron microscopy lithography 35 . In summary, a template design based on a restricted set of tiles with post motifs provides a way to achieve a complex pattern of line segments with bends and terminations from a relatively simple template.…”
Section: Discussionmentioning
confidence: 99%
“…For example, a block copolymer pattern with a periodicity of 18 nm could be achieved by templating a 16 kg mol À 1 PS-b-PDMS block copolymer 16 using a square post array with a periodicity of 18 nm and double posts with a post spacing of 12 nm. This resolution is difficult to achieve with electron-beam lithography, but similar resolution has been achieved by helium-ion beam lithography 34 and scanning transmission electron microscopy lithography 35 . In summary, a template design based on a restricted set of tiles with post motifs provides a way to achieve a complex pattern of line segments with bends and terminations from a relatively simple template.…”
Section: Discussionmentioning
confidence: 99%
“…This mode allows the recording of high-contrast images of crystalline materials and crystal defects even at modest beam energies. Helium ion microscopy has already been successfully used for resist-based structuring and the feasibility of 6nm features has been demonstrated (Sidorkin et al 2009). Ion beams may also be used for sample sputtering, but the light He ions have a very low yield.…”
Section: He Ion Microscopementioning
confidence: 99%
“…4,7,8 Being used for nanofabrication, HIM is reported to yield 4-nm-wide lines with a pitch of 10 nm as lithography tool. 9,10 Very narrow structures with almost no overspray can be made with the gas-induced deposition. 11,12 For thin-film dicing and nanopore drilling, sub-10-nm features are now achieved.…”
Section: Introductionmentioning
confidence: 99%