2000
DOI: 10.1116/1.1314387
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Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography

Abstract: Articles you may be interested inFabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique Sub-30 -nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics

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Cited by 11 publications
(2 citation statements)
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“…The fabrication of nano-scale patterns has become a critical issue due to the increasing need to shrink devices in integrated circuits in order to improve the device performance and reduce power consumption. To achieve this goal, many advanced techniques have been employed such as deep ultraviolet lithography (DUV) [1], extreme ultraviolet lithography (EUV) [2], and E-beam lithography [3]. Although these novel techniques are able to create ultra-small structures, their high-cost process makes these techniques not commonly accessible.…”
Section: Introductionmentioning
confidence: 99%
“…The fabrication of nano-scale patterns has become a critical issue due to the increasing need to shrink devices in integrated circuits in order to improve the device performance and reduce power consumption. To achieve this goal, many advanced techniques have been employed such as deep ultraviolet lithography (DUV) [1], extreme ultraviolet lithography (EUV) [2], and E-beam lithography [3]. Although these novel techniques are able to create ultra-small structures, their high-cost process makes these techniques not commonly accessible.…”
Section: Introductionmentioning
confidence: 99%
“…Γενικά, ο κανόνας που έχει ισχύσει µέχρι σήµερα είναι ότι για ορισµένο µήκος κύµατος µπορούν να τυπωθούν δοµές διάστασης περίπου ίσης µε αυτό. Η εισαγωγή των RET αυξάνει σηµαντικά την ανάλυση, µέσω της µείωσης του παράγοντα k 1 , και έχει δειχθεί ότι είναι δυνατή η απεικόνιση δοµών της τάξης του λ/6 ή ακόµα και λ/10 όπου λ=248 nm [82][83]…”
Section: θ26 τεχνικές αύξησης της ∆ιακριτικής ικανότητας (Resolution Enhancement Techniques Ret)unclassified