emitting diodes, flat panel displays, etc.) and energy harvesting (photovoltaics, low emissivity coatings, etc.). [1] They are produced by creating electron degeneracy in a wide bandgap oxide either introducing non-stoichiometry (solid solutions) and/ or appropriate dopants, like Sb or F. [2] This is usually achieved in mixtures of different Group III oxides with metal oxides where the metal can be a part of the semiconductor oxide or act as dopant. This leads to different families of TCOs including AZO (aluminum zinc oxide), IZO (indium zinc oxide), ITO (indium tin oxide), GZO (gallium zinc oxide), and so on. Among them ITO (typically ≈90% wt% In 2 O 3 + 10 wt% SnO 2) plays a key role, especially to produce transparent conductive electrodes (TCEs) in flat-panel displays. Regarding the structuring of ITO films, although wet chemical etching is suitable for producing micron-width electrodes, the need for rapid, and mask-less patterning of large areas led to investigation of the use of laser structuring already in the late 90s. [3] A similarly important application of lasers for processing TCOs is their use for sintering spin-coated films formed by nanoparticles, especially on flexible substrates. [4-6] However, the peculiarities of its absorption spectrum and the regular use of transparent substrates impose limitations in Highly anisotropic resistivity surfaces are produced in indium tin oxide (ITO) films by nanoscale self-organization upon irradiation with a fs-laser beam operating at 1030 nm. Anisotropy is caused by the formation of laser-induced periodic surface structures (LIPSS) extended over cm-sized regions. Two types of optimized structures are observed. At high fluence, nearly complete ablation at the valleys of the LIPSS and strong ablation at their ridges lead to an insulating structure in the direction transverse to the LIPSS and conductive in the longitudinal one. A strong diminution of In content in the remaining material is then observed, leading to a longitudinal resistivity ρ L ≈ 1.0 Ω•cm. At a lower fluence, the material at the LIPSS ridges remains essentially unmodified while partial ablation is observed at the valleys. The structures show a longitudinal conductivity two times higher than the transverse one, and a resistivity similar to that of the pristine ITO film (ρ ≈ 5 × 10 −4 Ω•cm). A thorough characterization of these transparent structures is presented and discussed. The compositional changes induced as laser pulses accumulate, condition the LIPSS evolution and thus the result of the structuring process. Strategies to further improve the achieved anisotropic resistivity results are also provided.