2001
DOI: 10.1117/12.410712
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Abstract: This paper describes that attenuated phase shift masks (APSM) improve process margin compared to binary mask (BIM) in KrF and ArF lithography. We present the real problems to occur in the mask fabrication, process and mask enor factor (MEF). As a result, sub-l2Onm cell patterns were delineated with 8% exposure latitude (EL) and '-O.6 ini local depth of focus (LDOF) using O.7ONA KrF and APSM. The performance of ArF lithography (NA=O.63) shows the similar process margin with 10% EL and O.6 tm LDOF. Using APSM, w… Show more

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