Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

Cho, Kyung Gook; Kim, Hyun Je; Yang, Hae Min; Seol, Kyoung Hwan; Lee, Seung‐Ju; Lee, Keun Hyung

doi:10.1021/acsami.8b13140

Cited by 41 publications

(18 citation statements)

References 56 publications

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“…Following the previous reports in the literature, the displacement current with various sweep rates was measured and n i was calculated from y -intercept of (∫ I Disp d V G )/( er V A ) versus r V –1 plot (Figure S9). We found n i in the range of 10 14 –10 15 cm –2 , which is close to the values in the reports of ionogel-gated OEGTs. ,, We also found that n i increased after chemical dedoping, following the trend in the MISM capacitance. PEDOT:PSS exhibited the largest degree of increase in n i from 1.5 × 10 14 to 1.1 × 10 15 cm –2 .…”

Section: Resultssupporting

confidence: 90%

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Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions

Kim

Jang

Lee

et al. 2020

ACS Appl. Mater. Interfaces

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We report comprehensive and comparative studies on chemical and electrochemical controls of doping characteristics of various poly(3,4-ethylenedioxythiophene) (PEDOT) composites complexed with sulfonates. Chemical treatment of PEDOT composites was conducted with a dedoping agent, tetrakis(dimethylamino)ethylene (TDAE), resulting in the changes in conformation and bulk charge-carrier density. Electrochemical control of doping states was done with a solid-state ionogel based on an ionic liquid dispersed in a polymer matrix. With this approach, we can fabricate solid-state organic electrolyte-gated transistors (OEGTs) with a large current modulation, a high mobility of holes, and a low driving voltage. Our OEGTs are operational in a dry environment and, surprisingly, form the two-dimensional channel of the interfacial charge carriers modulating the conductance under gate bias, unlike conventional liquid-based OEGTs. The charge-carrier mobility and the on-to-off current ratio reach up to ∼7 cm2 V–1 s–1 and over 104, respectively, from the chemically dedoped PEDOT composites. The ionogel-based gating of the layer of TDAE-treated PEDOT composites induces a reversible transition between a highly doped bipolaronic state and neutral/polaronic states, as revealed by the absorption profiles under gate bias. We also demonstrate in-plane OEGTs, in which the dedoped channel and the conductive source/drain electrodes are made of a single PEDOT composite layer.

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Section: Resultssupporting

confidence: 90%

“…13 We found n i in the range of 10 14 −10 15 cm −2 , which is close to the values in the reports of ionogel-gated OEGTs. 14,35,65 We also found that n i increased after chemical dedoping, following the trend in the MISM capacitance. PEDOT:PSS exhibited the largest degree of increase in n i from 1.5 × 10 14 to 1.1 × 10 15 cm −2 .…”

Section: Resultssupporting

confidence: 62%

Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions

Kim

Jang

Lee

et al. 2020

ACS Appl. Mater. Interfaces

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“…The statistical data (trip voltages, gains, and noise margins) shown in Figure demonstrated good uniformity of printed hybrid CMOS inverters. Compared with other hybrid CMOS inverters based on metal oxide, SWCNT TFTs, and organic TFTs shown in Table 2 , the hybrid CMOS inverter in this work demonstrates the highest voltage gain, largest noise margin, and lowest static power consumption at the supply voltage of 2 V …”

Section: Resultsmentioning

confidence: 91%

“…Recently, hybrid CMOS inverters based on the combination of different channel materials, such as organic/metal oxides, quantum dots/SWCNTs, 2D materials/SWCNTs, and metal oxides/SWCNTs, have been demonstrated. A few studies have studied the fabrication of TFTs by combining n‐type metal oxides and p‐type SWCNTs; however, their performance is still not satisfied with relatively low voltage gains and small noise margins at operation voltages less than 2 V. The key reason is that the performance characteristics of printed p‐type and n‐type transistors, i.e., mobility, sub‐threshold swing (SS), threshold voltage, and operation voltage, usually do not match well .…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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Inkjet printing is a promising technique to fabricate thin-film transistors (TFTs) and integrated complementary metal-oxidesemiconductor (CMOS) circuits because of its patterned Complementary metal-oxide-semiconductor (CMOS) inverters with low power consumption and high noise immunity are essential for realizing practical applications of printed logic gates and circuits. However, the performance of existing printed CMOS inverters is still unsatisfactory because p-type and n-type transistors do not match well. This work demonstrates novel low-voltage and high-performance CMOS inverters using partially printed thin-film transistors (TFTs) on 50 nm HfO 2 /Si substrates based on n-type indium zinc oxides (IZOs) and p-type chirality enriched (9,8) semiconducting single-walled carbon nanotubes (SWCNTs). The high-k dielectric materials grown using atomic layer deposition and (9,8) SWCNTs with relatively large band gaps help to match the characteristics of p-type and n-type transistors-the IZO and SWCNT TFTs exhibit similar mobility on/off ratio, small hysteresis, and low sub-threshold swing at low operating voltages. The hybrid CMOS inverters demonstrate excellent performance with the highest voltage gain up to 45, the largest noise margin of 83% at 1/2 V dd , and the lowest static power consumption of 0.4 µW at V dd of 2 V among recently reported printed CMOS inverters under relatively low annealing temperatures (300 °C). The strategies demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates and circuits. Printable ElectronicsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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“…6a). In addition to existing OECT technologies, we have also compared our results with voltage amplifiers based on electrolytegated thin-film transistors [28][29][30][31] and organic field-effect transistors [32][33][34][35][36] (details can be found in Supplementary Table 2). Cutting-edge voltage amplifiers, that implement unipolar organic field-effect transistors in differential 36 and pseudo-CMOS 35 37 where the power supply is heavily limited.…”

Section: Printed Oect-based Push-pull Voltage Amplifiersmentioning

confidence: 99%

Low‐Power/High‐Gain Flexible Complementary Circuits Based on Printed Organic Electrochemical Transistors

Yang

Ruoko

et al. 2021

Adv Elect Materials

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scaling law, states that the supply voltage for each new CMOS generation is reduced by 30%, and the power consumption subsequentially reduces by 50%. After decades of development, the latest 7-nm-node CMOS process reaches a supply voltage of 0.75 V. [2] Today, the Si-CMOS technology is heavily explored in Internet of Things (IoT) applications, serving as low-power outposts that record physical sensor parameters (e.g., motion, light, temperature), communicate over long distances, and harvest and store energy for its operation. [3] Expanding IoT modules with flexible, soft, or large-area chemical sensors and actuators only possible off-Si, enables a circuit technology that can amplify and route signals, facilitating signal compatibility and low-cost integration between Si-technology and embedded devices. Further, for many IoT and bioelectronic applications (e.g., (bio-)chemical sensors and neuronal interfacing), the on-site technology is preferably realized without Sichips to enable many different form factors, proximity, elasticity, and signal transduction, tailor-made for the actual chemical/biological environment. Also in this case, a low-power/voltage, high-performing, and flexible circuit technology operating at the site of stimulation or sensing is needed to record and transfer signals at high signal-to-noise performance. The ability to accurately extract low-amplitude voltage signals is crucial inseveral fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things (IoT). The organic electrochemical transistor (OECT), which features large transconductance values at low operating voltages, is ideal for monitoring small signals. Here, low-power and high-gain flexible circuits based on printed complementary OECTs are reported. This work leverages the low threshold voltage of both p-type and n-type enhancement-mode OECTs to develop complementary voltage amplifiers that can sense voltages as low as 100 µV, with gains of 30.4 dB and at a power consumption of 0.1-2.7 µW (single-stage amplifier). At the optimal operating conditions, the voltage gain normalized to power consumption reaches 169 dB µW −1 , which is >50 times larger than state-of-the-art OECTbased amplifiers. In a monolithically integrated two-stage configuration, these complementary voltage amplifiers reach voltage gains of 193 V/V, which are among the highest for emerging complementary metal-oxide-semiconductorlike technologies operating at supply voltages below 1 V. These flexible complementary circuits based on printed OECTs define a new power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon applications.

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Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

Cited by 41 publications

References 56 publications

Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions

Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Low‐Power/High‐Gain Flexible Complementary Circuits Based on Printed Organic Electrochemical Transistors

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