Sub-50nm half-pitch imaging with a low activation energy chemically amplified photoresist

Wallraff, G. M.; Medeiros, David R.; Sanchez, Martha I.; Petrillo, Karen; Huang, Wu‐Song; Rettner, Charles; Davis, Bradley J.; Larson, Carl E.; Sundberg, Linda K.; Brock, Phillip J.; Hinsberg, William D.; Houle, Frances A.; Hoffnagle, John A.; Goldfarb, Darı́o L.; Temple, Karen; Wind, Shalom J.; Bucchignano, James J.

doi:10.1116/1.1813463

Cited by 19 publications

(18 citation statements)

References 13 publications

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“…The results of the resist PSF extraction with DC offset term for KRS resist 7 are shown in Figure 3. The best fit was a Gaussian FWHM of 18 nm with a DC offset value of 0.25.…”

Section: Krs Resistmentioning

confidence: 99%

Modeling of EUV photoresists with a resist point spread function

2005

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Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, a printing station based upon the 0.3-NA Micro Exposure Tool (MET) optic was established at the Advanced Light Source, a synchrotron facility at Lawrence Berkeley National Laboratory.A resist modeling technique using a resist point spread function has been shown to have good agreement with experiments for certain EUV resists such as Shipley EUV-2D [2]. The resist point spread function is a two-dimensional function that, when convolved with the simulated aerial image for a given mask pattern and applied to a threshold function, gives a representation of the photoresist pattern remaining after development. The simplicity of this modeling approach makes it attractive for rapid modeling of photoresists for process development applications.In this work, the resist point spread functions for three current high-resolution EUV photoresists [Rohm and Haas EUV-2D, Rohm and Haas MET-1K (XP 3454C), and KRS] are extracted experimentally. This model is then used in combination with aerial image simulations (including effects of projection optic aberrations) to predict the resist pattern for a variety of test patterns. A comparison is made between these predictions and experimental results to evaluate the effectiveness of this modeling technique for newer high-resolution EUV resists.

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“…The results of the resist PSF extraction with DC offset term for KRS resist 7 are shown in Figure 3. The best fit was a Gaussian FWHM of 18 nm with a DC offset value of 0.25.…”

Section: Krs Resistmentioning

confidence: 99%

Modeling of EUV photoresists with a resist point spread function

2005

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“…The KRS resist is based on a polyhydroxystyrene platform bearing a ketal protecting group and can yield high resolution features [23], however it has been originally intended for photomask writing applications [24]. For the purpose of this work, available cross-section SEM images of KRS resist patterned with ebeam lithography at variable pitch and thickness were analyzed ( Figure 4).…”

Section: Surfactant-containing Rinse and Resist Design For Collapse Mmentioning

confidence: 99%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO 2 ) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

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“…9 A resist thickness of 125 nm was used in each case. Three resists were used: Rohm and Haas EUV-2D, Rohm and Haas MET-1K ͑XP 3454C͒, and a ketal resist system ͑KRS͒.…”

Section: Dark-field Contrast Transfer Function Measurementsmentioning

confidence: 99%

Resist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic

Cain

Naulleau

Spanos

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In order to meet the high-resolution printing potential of extreme ultraviolet ͑EUV͒ lithography, the projection optics must be of very high quality. The contrast transfer function ͑CTF͒, a measure of the aerial-image contrast as a function of pitch, describes one key aspect of projection optic quality. In order to support research into EUV lithography, a static microfield exposure tool ͑MET͒ based on a 0.3 numerical aperture optic and operating at a wavelength of 13.5 nm has been developed at the Advanced Light Source, a synchrotron facility at the Lawrence Berkeley National Laboratory. This work presents the results of resist-based measurements of the CTF for the MET optic. Although the resist is not an ideal aerial-image detector due to its nonlinear response, it is still possible to study some key characteristics of the optics using such methods. These measurements are based on line/space patterns printed in several different EUV photoresists. The experimental CTF results are compared with the CTF from aerial-image simulations including the aberrations measured in the projection optic using interferometric and lithographic techniques. The measured CTF values are found to be significantly lower than predicted from the aerial-image simulations. CTF measurements are presented for both bright-field and dark-field mask patterns in order to investigate the effect of flare. Finally, the orientation dependence of the CTF is studied in order to evaluate the effect of nonrotationally symmetric lens aberrations. Neither flare nor nonrotationally symmetric aberrations were found to have a significant effect on the measured CTF. Photoresist resolution is believed to be the limiting factor in the observed contrast transfer function. These measurements, taken as a whole, provide valuable information about the imaging performance of the MET optic and aid in interpreting the results of other experiments performed using the MET and similar systems.

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Sub-50nm half-pitch imaging with a low activation energy chemically amplified photoresist

Abstract: Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure: Implementation of 248 and 193 nm resists J.

Cited by 19 publications

References 13 publications

Modeling of EUV photoresists with a resist point spread function

Modeling of EUV photoresists with a resist point spread function

Pattern collapse mitigation strategies for EUV lithography

Resist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic

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