2015
DOI: 10.1002/cphc.201500183
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Sub‐Bandgap Excitation‐Induced Electron Injection from CdSe Quantum Dots to TiO2 in a Directly Coupled System

Abstract: We show that the sub-bandgap excitation of a directly coupled CdSe quantum dot (QD)-TiO2 system induces electron injection from CdSe levels to the conduction band of TiO2 , leading to spectral extension of the light response. We anticipate that this study presents a useful guideline for improving the conversion efficiency of QD-sensitized solar cells.

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Cited by 13 publications
(6 citation statements)
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“…A well studied and interesting approach for inducing visible-light activity in TiO 2 is to couple it with nano-structured metal chalcogenide semiconductors such as CdS, as described in [39,40]. An interesting and key feature of these metal chalcogenides is that their band edges (that determine the redox ability) can be varied over a wide range by controlling the particle size, that is the well known size quantization effect.…”
Section: Introductionmentioning
confidence: 99%
“…A well studied and interesting approach for inducing visible-light activity in TiO 2 is to couple it with nano-structured metal chalcogenide semiconductors such as CdS, as described in [39,40]. An interesting and key feature of these metal chalcogenides is that their band edges (that determine the redox ability) can be varied over a wide range by controlling the particle size, that is the well known size quantization effect.…”
Section: Introductionmentioning
confidence: 99%
“…A representative of them is the CdS QD-loaded TiO 2 (CdS/TiO 2 ) system, which has mainly been studied in particulate systems. Also, a great deal of attention has been focused on the QD-loaded TiO 2 nanostructures such as mesoporous TiO 2 nanocrystalline film (mp-TiO 2 ) for the application as the photoanode of photoelectrochemical (PEC) cells for solar energy conversion. , The deep understanding of the mechanism on the visible-light-induced electron injection from CdS QDs to TiO 2 underpins the improvement in the performances of the photocatalysts and photoanodes. As shown in Scheme , we have shown in the CdSe/TiO 2 system that the sub-bandgap excitation-induced electron injection from the VB of CdSe to the CB of TiO 2 (path 2) occurs in addition to the inter-CB electron transfer (path 1) . However, the detailed mechanism in the CdS/TiO 2 system remains unknown.…”
Section: Introductionmentioning
confidence: 99%
“…As shown in Scheme 1, we have shown in the CdSe/TiO 2 system that the sub-bandgap excitation-induced electron injection from the VB of CdSe to the CB of TiO 2 (path 2) occurs in addition to the inter-CB electron transfer (path 1). 7 However, the detailed mechanism in the CdS/TiO 2 system remains unknown. If path 2 exists also in the CdS/TiO 2 system, the high-coverage formation of CdS QDs on TiO 2 can be expected to enhance the performance in the same manner as the CdSe/TiO 2 system.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The discrepancy between the photocurrent onset wavelength ( λ on ) and the absorption edge originates from the electron transition from the VB of CdS or CdSe QD to the CB of TiO 2. The CdSe photodeposition on CdS/mp‐TiO 2 extends the λ on value to 680 nm, and the IPCE is comparable with that for CdSe/mp‐TiO 2 at 500< λ <600 nm and that for CdS/mp‐TiO 2 at 400< λ <500 nm. Evidently, CdS and CdSe QDs cooperatively act as the photosensitizer in the CdS@CdSe( t p1 =1 h, t p2 =2 h)/mp‐TiO 2 photoanode cell.…”
Section: Methodsmentioning
confidence: 64%
“…Figure B shows the Tauc plots for the samples. CdS/mp‐TiO 2 and CdSe/mp‐TiO 2 have band gaps ( E g ) of 2.68 eV and 1.81 eV, respectively, which are near the bulk values of 2.5 eV for CdS and 1.7 eV for CdS . Thus, the E g value of CdS@CdSe/mp‐TiO 2 can be controlled in a wide range from 1.7 and 2.5 eV due to the size quantization of CdSe by changing t p1 and t p2 .…”
Section: Methodsmentioning
confidence: 99%