Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs

Chi, Shumeng; Kim, H.T.; Kim, M.S.; Kim, T.E.; Shin, Hyungcheol; Park, H.S.; Kim, K.H.; Kim, K.S.; Nam, In-Hyun; Kim, D.J.; Min, Kyeong‐Sik; Kang, Dongyeon; Kim, D.M.

doi:10.1049/el:20031080

Cited by 3 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Characterizing n-and p-MOSFETs on the same wafer, the extracted in the photoresponsive energy band [ in NMOS and in PMOS capacitors] is comparatively shown in Fig. 4 with obtained from the photonic gated-diode method [10]. Extracted trap density ranges eV cm and shows a typical U-shaped distribution between and [7].…”

Section: Resultsmentioning

confidence: 99%

“…We note that the subthreshold saturation current and the subthreshold slope through the ideality factors ( and ) depend strongly on the gate voltage through the depletion capacitance . The photoinduced trap capacitance can be obtained from the difference between the ideality factors ( and ) as (10) therefore, the interface trap density can be finally obtained from (11)…”

Section: Optical Subthreshold Current Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems

Kim

Nam

Kim

et al. 2004

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

Optical subthreshold current method (OSCM) is proposed for characterizing the interface states in MOS systems using the current-voltage characteristics under a photonic excitation. An optical source with a subbandgap ( ph ) photonic energy ( ph = 0 943 eV, opt = +5 dBm), which is less than the silicon bandgap ( = 1 12 eV), is employed for the optical subthreshold current characterization of interface states in the photoresponsive energy band. We applied the OSCM method under a subbandgap photonic excitation to MOS systems with a poly-Si gate and verified a U-shaped distribution of interface trap density it = 10 10 10 12 eV 1 cm 2 for n-and p-type MOSFETs with = 30 m 1 2 m.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Optical Subthreshold Current Methodsmentioning

confidence: 99%

Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems

Kim

Nam

Kim

et al. 2004

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories

Jeon

Lee

Kim

et al. 2010

Solid-State Electronics

View full text Add to dashboard Cite

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions

Guo

Wang

Yoong

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

We report the effect of the top electrode/functional layer interface on the performance of ferroelectric tunnel junctions. Ex situ and in situ fabrication process were used to fabricate the top Pt electrode. With the ex situ fabrication process, one passive layer at the top interface would be induced. Our experimental results show that the passive interface layer of the ex situ devices increases the coercive voltage of the functional BaTiO layer and decreases the tunneling current magnitude. However, the ex situ tunneling devices possess more than 1000 times larger ON/OFF ratios than that of the in situ devices with the same size of top electrode.

show abstract

Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs

Cited by 3 publications

References 7 publications

Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems

Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems

Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions

Contact Info

Product

Resources

About