2022
DOI: 10.1021/acs.jpclett.2c03530
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Sub-Bandgap-Voltage Electroluminescence of Light-Emitting Diodes

Abstract: Sub-bandgap-voltage electroluminescence (EL) has been frequently reported in quantum dot, organic, and perovskite light-emitting diodes. Due to the complex physical process across devices, the underlying mechanism is still under intensive debate. Here, based on thermodynamics, we offer an orthodox explanation of sub-bandgap-voltage EL and discuss the applicability of the previously proposed models.

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Cited by 3 publications
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“…The value of Δ V 3 is related to the voltage difference between the turn-on voltage and the voltage at maximum EQE (Δ V eqe ). Turn-on voltage is mainly determined by the flat band voltage between charge transfer layer and QD layer, device with relatively high turn-on voltage has a large barrier for charge injection. , According to decision tree analysis, the Δ V 1 values of stable device are less than 2.15, and device with higher turn-on voltage has worse stability.…”
mentioning
confidence: 99%
“…The value of Δ V 3 is related to the voltage difference between the turn-on voltage and the voltage at maximum EQE (Δ V eqe ). Turn-on voltage is mainly determined by the flat band voltage between charge transfer layer and QD layer, device with relatively high turn-on voltage has a large barrier for charge injection. , According to decision tree analysis, the Δ V 1 values of stable device are less than 2.15, and device with higher turn-on voltage has worse stability.…”
mentioning
confidence: 99%