Sub-half micron metallization using high-pressure Al

Rich, P. J.

doi:10.1016/s0167-9317(97)00126-3

Cited by 3 publications

(1 citation statement)

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“…As Figure 2 illustrates, both PtSi and IrSi have potentially low Schottky barrier heights to p-Si. Of course, PtSi has been investigated previously and its properties are well-documented [36]. One issue with PtSi is Pt radioactive decay, creating a source of alpha emitters that may cause significant softerrors in devices.…”

Section: Ecs Transactions 13 (1) 377-388 (2008)mentioning

confidence: 99%

Silicides for 22nm and Beyond

et al. 2008

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Silicide engineering for high-performance CMOS logic devices is challenged by aggressive scaling of critical dimensions, new high-performance elements, and requirements of morphological stability. While NiSi can satisfy many of the integration challenges, incorporating Pt forms a more robust [NixPt(1-x)]Si and improves morphological stability. In light of the challenges created by performance enablers, we review our latest results indicating whether a replacement for NiPt(1-x)Si is needed and highlight our investigations into alternative silicide materials such as Er, Yb, and Ir. We also discuss the architecture and performance needs beyond 32nm technology.

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Section: Ecs Transactions 13 (1) 377-388 (2008)mentioning

confidence: 99%

Silicides for 22nm and Beyond

et al. 2008

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Contact-pressing metallization

Khang

Lee

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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TEM Observations on the Evolution of Grain Structure in Pressurized Al-0.5Cu Thin Films

Yang

Kim²,

Saran

et al. 1998

MRS Proc.

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This paper reports the observations of the grain-refining mechanism found in Al-0.5Cu thin films that are subjected to hydrostatic compressive pressure during the annealing process. The films are deposited on Si substrates and subsequently placed under 60 MPa Ar gas pressure at 400°C. Transmission electron microscopy on these films reveals that plastic deformation occurs by dislocation slip and induces a refined grain structure. Polygonization is the primary mechanism for grain refining, resulting in the formation of sub-grain boundaries.

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Sub-half micron metallization using high-pressure Al

Cited by 3 publications

References 1 publication

Silicides for 22nm and Beyond

Silicides for 22nm and Beyond

Contact-pressing metallization

TEM Observations on the Evolution of Grain Structure in Pressurized Al-0.5Cu Thin Films

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