2006
DOI: 10.1007/s10470-006-7159-0
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Sub-mA single ended CMOS low noise amplifier with 2.41 dB noise figure

Abstract: This paper presents a single ended low noise amplifier (LNA) using 0.18 µm CMOS process packed and tested on a printed circuit board. The LNA is powered at 1.0 V supply and drains 0.95 mA only. The LNA provides a forward gain of 11.91 dB with a noise figure of only 2.41 dB operating in the 0.9 GHz band. The measured value of IIP3 is 0.7 dBm and of P1dB is − 12 dBm.

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Cited by 3 publications
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“…The proposed system architecture and the developed behavioral models can also be used in the simulation and design of the CI devices [40]. The proposed hearing aid system can be realised on silicon using CMOS technology [32,41]. …”
Section: Discussionmentioning
confidence: 99%
“…The proposed system architecture and the developed behavioral models can also be used in the simulation and design of the CI devices [40]. The proposed hearing aid system can be realised on silicon using CMOS technology [32,41]. …”
Section: Discussionmentioning
confidence: 99%