A vertical cavity surface emitting laser (VCSEL) quick fabrication (VQF) process is applied to epitaxial materials designed for miniature atomic clock applications (MACs). The process is used to assess material quality and uniformity of a full 100 mm (4-inch) wafer against the stringent target specification of VCSELs for MACs. Target specifications in optical power (>0.6 mW) and differential efficiencies (<0.5 W/A) are achieved over large portions of a wafer; however, the variation in the oxide aperture diameter is shown to limit the yield. The emission of the fundamental mode at 894.6 nm at 70 ℃ is met over a significant area of the wafer for ~4 μ m aperture multi-mode devices. The consideration of the on-wafer variation reveals that further optimisation is required to increase the device yield to levels required for volume manufacture.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.