Sub-micrometer scale patterning on single-crystal diamond surface using focused ion beam and deep ultraviolet laser irradiations

Kawasegi, Noritaka; Yamaguchi, Makoto; Kozu, Tomomi; Morita, Noboru; Nishimura, Kazuhito

doi:10.1016/j.precisioneng.2017.06.007

Cited by 11 publications

(2 citation statements)

References 20 publications

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“…Focused ion beams (FIB) play an increasingly important role in materials research areas such as nanoanalysis (e.g., secondary ion mass spectrometry (SIMS) [1][2][3] and sample preparation for transmission electron microscopy (TEM) [4], atom probe to-mography (APT) [5], and ion beam analysis used for life sciences applications [6,7]), surface patterning [8], nanolithography [9], nanomachining [10,11], and nanoprinting at room [12] and cryogenic temperatures [13]. The development of nanotechnology relies on lower ion beam energies and smaller spot sizes to reduce the thickness of the layer damaged by ion beams, and to increase the lateral resolution for precise machining and sample characterization.…”

Section: Introductionmentioning

confidence: 99%

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Defoort-Levkov¹,

Bahm²,

Philipp³

2022

Beilstein J. Nanotechnol.

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Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and nanoprinting. For many of these applications, a precise control of ion-beam-induced processes is essential. The effect of contaminations on these processes has not been thoroughly explored but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.

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Section: Introductionmentioning

confidence: 99%

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Defoort-Levkov¹,

Bahm²,

Philipp³

2022

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Influence of water contamination on the sputtering of silicon with low energy argon ions investigated by Molecular Dynamics simulations.

Defoort-Levkov¹,

Bahm²,

Philipp³

2022

Preprint

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Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining and nanoprinting. For many of these applications, a precise control of the ion-beam induced processes is essential. The effect of contaminations on these processes has not been explored thoroughly but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers, i.e. water, adsorbed on a silicon surface, influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing of the hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not changed significantly by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered depends largely on the incidence angle. This fraction is largest for incidence angles between 70 and 80 degrees defined with respect to the sample surface. Overall, it changes from 25% to 65%.

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Ion Beam Machining

Kawasegi¹

2018

Toxinology

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Sub-micrometer scale patterning on single-crystal diamond surface using focused ion beam and deep ultraviolet laser irradiations

Cited by 11 publications

References 20 publications

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Influence of water contamination on the sputtering of silicon with low energy argon ions investigated by Molecular Dynamics simulations.

Ion Beam Machining

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