Highly porous silicon has been successfully used to create thermally isolated local areas on bulk crystalline silicon, for the fabrication of silicon integrated sensors. Heat distribution and heat transfer have been simulated by using finite element analysis with the ANSYS software. Three cases were compared: the case of bulk crystalline silicon, the case of porous silicon and that of free standing polycrystalline silicon membranes. A flow sensor of the thermal type using porous silicon isolation has been designed and fabricated, showing high sensitivity and rapid response. Its operation principle and main characteristics will be presented.Introduction Highly porous silicon shows a thermal conductivity of the order of 1.2 W/mK [1], which is 120 times lower than that of bulk crystalline silicon. This gives wide possibilities for applications in silicon integrated sensors and microsystems. Thermally isolated areas may be locally created on a silicon wafer by selective electrochemical dissolution of bulk silicon through a patterned masking layer [2,3]. The most effective masking material in this respect is undoped polycrystalline silicon, which shows very high etching resistance to the chemical solution used for porous silicon (PS) formation. It can be used to grow thick porous silicon layers, providing good thermal isolation compared to bulk crystalline silicon.In this paper, the thermal isolation approach mentioned above is used to design and fabricate a miniaturized silicon flow sensor of the thermal type.