1995
DOI: 10.1016/0040-6090(94)05675-4
|View full text |Cite
|
Sign up to set email alerts
|

Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
31
0

Year Published

1998
1998
2010
2010

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 65 publications
(31 citation statements)
references
References 9 publications
0
31
0
Order By: Relevance
“…Finally, the ease with which porous Si can be integrated into well-established Si microelectronics fabrication techniques could also lead to more sophisticated, active devices for medical applications [65,89,198]. The possibility of placing active electronic circuit components into the silicon-based particles is another feature of silicon that is yet to be exploited for in vivo use.…”
Section: Summary and Prospectsmentioning
confidence: 99%
“…Finally, the ease with which porous Si can be integrated into well-established Si microelectronics fabrication techniques could also lead to more sophisticated, active devices for medical applications [65,89,198]. The possibility of placing active electronic circuit components into the silicon-based particles is another feature of silicon that is yet to be exploited for in vivo use.…”
Section: Summary and Prospectsmentioning
confidence: 99%
“…The mask must be HF resistant or stable enough to withstand HF during anodization. Standard photoresists can be used but are degraded during anodization leading to undercutting and anodization through the mask via pinholes [32][33][34]. Si dioxide can be used for short anodization times [32,35].…”
Section: Effect Of Anodization Conditionsmentioning
confidence: 99%
“…Standard photoresists can be used but are degraded during anodization leading to undercutting and anodization through the mask via pinholes [32][33][34]. Si dioxide can be used for short anodization times [32,35]. Stoichiometric silicon nitride and silicon carbide induces stress problems leading to cracking [32,36].…”
Section: Effect Of Anodization Conditionsmentioning
confidence: 99%
See 1 more Smart Citation
“…Local Thermal Isolation by Thick PS Layers The process for local formation of thick porous silicon layers has been described in detail elsewhere [2,4]. When p-type wafers are used, the process is isotropic, so the PS layer is simultaneously formed in both z and x±y directions, under the mask.…”
mentioning
confidence: 99%