a b s t r a c tHigh resolution selected area channeling pattern (HR-SACP) assisted accurate electron channeling contrast imaging (A-ECCI) was used to unambiguously characterize the structure of a low angle grain boundary in an interstitial-free-steel. The boundary dislocations were characterized using TEM-style contrast analysis. The boundary was determined to be tilt in nature with a misorientation angle of 0.13°consistent with the HR-SACP measurements. The results were verified using high accuracy electron backscatter diffraction (EBSD), confirming the approach as a discriminating tool for assessing low angle boundaries.The development and structure of low angle grain boundaries play critical roles in a wide range of materials processes and behaviors. Examples of where such boundaries are inexorably linked to behavior include the development of low energy dislocation structures during static and dynamic recovery, creation of dislocation cell structures during fatigue deformation, and many creep processes.In order to fully understand many of these phenomena, it is necessary to characterize low angle boundaries in terms of their misorientations and dislocation structure. In many cases such studies have been carried out using transmission electron microscopy (TEM) in conjunction with electron diffraction, which offers direct imaging combined with high accuracy orientation measurements [1-9]. Nevertheless, TEM is limited by the need to create, and the potential artifacts of, thin foils [10,11].Over the past two decades electron backscattered diffraction (EBSD) and associated orientation mapping has been used to rapidly map crystal orientations at the surfaces of bulk materials, allowing sub grain structures to be readily observed over large areas [12,13]. However, this approach is limited in that it does not allow direct imaging and characterization of the defects associated with low angle boundaries and, in most cases, is hampered by the inherent limits in precision of the Hough transform based approach to solving EBSD patterns [14][15][16].Electron channeling contrast imaging (ECCI) is a powerful technique for observing and characterizing crystallographic defect such as dislocations, stacking faults, and grain boundaries in scanning electron microscopy (SEM) [17][18][19][20][21][22][23]. In order to detect defects, ECCI uses the fact that the backscattered electron yield is very sensitive to the angle between the incident beam and the crystal lattice. ECC can be optimized by controlling the channeling conditions to so called two-beam conditions, allowing the characterization of crystallographic planes responsible for the channeling effect and facilitating TEM-style contrast analysis [17,24,25].A novel approach to control the channeling conditions for performing ECCI with an accuracy of 0.04°has recently been developed. This approach is based on an innovative procedure for collecting high angular and spatial resolution (about 500 nm) selected area channeling patterns (HR-SACPs) on the GEMINI-type electron column [...