2003
DOI: 10.1016/s0038-1101(03)00157-6
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Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

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Cited by 28 publications
(13 citation statements)
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“…It may also impact the design of the driving circuit as in [21], which may include a fast opening-switch component [24].…”
Section: Discussionmentioning
confidence: 99%
“…It may also impact the design of the driving circuit as in [21], which may include a fast opening-switch component [24].…”
Section: Discussionmentioning
confidence: 99%
“…In addition, design approaches to 4H:SiC SRDDs that take into account specific technologies and conditions for implementing the effect of ultrafast reverse current breaking are lacking. The number of published (mainly Russian) works, including theoreti cal and experimental works, concerning SiC SRDDs amounts to no more than ten [3][4][5][6][7]. In all these works, p + -p 0 -n + diodes are considered (such 4H : SiC based diodes were first suggested by us early in the 2000s [3,4]).…”
Section: Introductionmentioning
confidence: 99%
“…The number of published (mainly Russian) works, including theoreti cal and experimental works, concerning SiC SRDDs amounts to no more than ten [3][4][5][6][7]. In all these works, p + -p 0 -n + diodes are considered (such 4H : SiC based diodes were first suggested by us early in the 2000s [3,4]). Here, we consider another, more promising design of high voltage 4H:SiC SRDDs: an SRDD with a p + -p-n 0 -n + structure.…”
Section: Introductionmentioning
confidence: 99%
“…It would be expected that the use of 4H SiC in diode breakers should substantially improve their parameters: switched power, operation speed, and clock frequency of pulses. We have previously discovered the effect of subnanosecond current breaking in mesa epitaxial 4H SiC p + -p 0 -n + diodes upon their pumping with a quasi dc current [6,7]. A simulation has shown [8] that the key factor governing the manner in which cur rent breaking occurs (it is in fact close to the DSRD mode) is the large ratio between the electron and hole mobilities in 4H SiC: μ n /μ p ≈ 8.…”
Section: Introductionmentioning
confidence: 99%