Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs

Bian, Wei; He, Jin; Zhang, Lining; Zhang, Jian; Chan, Mansun

doi:10.1016/j.microrel.2009.05.008

Cited by 6 publications

(3 citation statements)

References 27 publications

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“…Ratio of the first term to the second term under the square root of (7). η > 1 is expected to validate the approximations in deriving (8).…”

Section: Drain Current Model Including Velocity Saturationmentioning

confidence: 70%

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A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs

Zhang¹,

Guan²,

Zhou³

et al. 2009

Semicond. Sci. Technol.

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A carrier-based analytic drain current model including the velocity saturation effect for the undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the previously ideal carrier-based drain current model, the Caughey-Thomas mobility model with an exponent factor n = 2 is applied and integrated into the analytic drain current model development. The validity of the presented model is confirmed by comparisons with three-dimensional (3D) TCAD device simulations for good agreements between the model prediction and numerical simulation on transfer/output characteristics and trans/output-conductance of the SRG MOSFETs are obtained in the whole operation regions from subthreshold to strong inversion and from linear to saturation regions. The symmetry property of the developed drain current model is guaranteed by the exponent factor n = 2 in the Caughey-Thomas model and also further tested, promoting the analog circuit design function of the proposed model.

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“…Ratio of the first term to the second term under the square root of (7). η > 1 is expected to validate the approximations in deriving (8).…”

Section: Drain Current Model Including Velocity Saturationmentioning

confidence: 70%

“…In [4], Bo et al obtained the explicit solution of the βbased implicit voltage input equation. In [5][6][7][8], the authors developed the analytic potential-based model. In [9][10][11][12][13], Jin et al developed the carrier-based drain current model.…”

Section: Introductionmentioning

confidence: 99%

A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs

Zhang¹,

Guan²,

Zhou³

et al. 2009

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Being the sub-threshold slope factor, S, an essential analysis tool to appraise MOSFETs' sub-threshold performance and reliability [6][7][8], it is crucial to be able to extract its value from measured data in an as accurate and dependable way as possible. However, the traditional and obvious method of numerically calculating the derivative of the drain current with respect to gate voltage frequently falls short of these requirements.…”

Section: Introductionmentioning

confidence: 99%

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Ortíz‐Conde

Sánchez

Liou

et al. 2010

Microelectronics Reliability

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Exact Analytical Solution for the Critical Layer Thickness of a Lattice-Mismatched Heteroepitaxial Layer

Belgacem

Fnaiech

2010

Journal of Elec Materi

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Based on the Lambert W-function, an exact analytical solution for the critical thickness of a lattice-mismatched heteroepitaxial layer is presented. The new expression in exact and algebraic closed form eliminates the need for complex iterative computation. Its high accuracy is proved by comparison of the calculated critical thickness versus fractional atomic content of an alloy epilayer with the respective numerical solution.

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Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs

Cited by 6 publications

References 27 publications

A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs

A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Exact Analytical Solution for the Critical Layer Thickness of a Lattice-Mismatched Heteroepitaxial Layer

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