Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Abstract

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10−10 W/Hz1/2. With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼103 times better in the specral range of ν ∼55–78 GHz reaching NEPpos ≈10−12 W/Hz1/2.

Terahertz detection and emission by field-effect transistors

“…The transistors T1 and T2 based on 1-µm Silicon CMOS technology and used in the experiment, have channel width to length ratio of W/L = 2/20 µm and W/L = 3/20 µm, respectively (see Fig 6.b.) ( [17]). The transistors have common metal source and gate contacts acting as antennas.…”

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe

“…Thus, it is possible to realize detectors on the effect of the electron gas heating, such as hot electron bolometers or field effect transistors with a shallow channel on the basis of the in-plane transport in the quantum well [45].…”

SUB-THz/THz RADIATION DETECTOR DEVICE BASED ON Si-MOSFET

“…Среди предложенных в последнее время принципов детектирования суб-ТГц/ТГц излу-чения можно выделить приемник излучения, основанный на эффекте выпрямления высокоча-стотного индуцированного тока в канале полево-го транзистора обусловленного нелинейностью электрических характеристик транзистора [3][4][5] или генерации плазменных колебаний [6] в ка-нале. При относительно небольшой стоимости единицы продукции использование стандартной кремниевой технологии для изготовления поле-вых транзисторов как приемников суб-ТГц/ТГц излучения позволяет улучшить стабильность и повторяемость их характеристик.…”

“…В работе рассмотрена возможность использо-вания в качестве суб-ТГц/ТГц приемников крем-ниевых металл-оксид-полупроводникових по-левых транзисторов (Si-MOSFET, silicon metal − oxide − semiconductor field − effect transistor) [3][4] и проверена его работа на частоте 140 ГГц.…”