Sub-volt metal-oxide thin-film transistors enabled by solution-processed high-k Gd-doped HfO2 dielectric films

Kim, Hyunhee; Kim, Taegyu; Kang, Young-Jin; Jeon, Seoung-Pil; Kim, Jiwan; Kim, Jae Hyun; Park, Sung Kyu; Kim, Yong-Hoon

doi:10.1016/j.mssp.2023.107746

Cited by 1 publication

(1 citation statement)

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“…Furthermore, research efforts are ongoing to fabricate high-performance FeFETs by doping hafnia-based ferroelectrics not only with Y but also with elements such as silicon (Si), aluminum (Al), and gadolinium (Gd) (Table S1). ,− These research findings clearly demonstrate the effectiveness of doping HZO in enhancing its electrical properties. Consequently, by improving the electrical characteristics of HZO, FeTFTs provide a powerful means to enhance circuit integration alongside memory functionality.…”

Section: Resultssupporting

confidence: 52%

High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

Kim,

Choi,

Lee

et al. 2024

ACS Appl. Mater. Interfaces

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Preventing ferroelectric materials from losing their ferroelectricity over a low thickness of several nanometers is crucial in developing multifunctional nanoelectronics. Epitaxially grown 5 at. % yttrium-doped Hf 0.5 Zr 0.5 O 2 (YHZO) thin films exhibit an atomically smooth surface, an ability to maintain ferroelectricity even at a thickness of 10 nm, and excellent insulating properties, making them suitable for use as gate oxides in ferroelectric thin film transistors (FeTFTs). Through the epitaxial growth of a YHZO/ La 0.67 Sr 0.33 MnO 3 (LSMO)/SrTiO 3 (STO) heterostructure, YHZO effectively retains its ferroelectricity and orthorhombic single phase, leading to enhancing electron mobility (∼19.74 cm 2 V −1 s −1 ) and memory window (3.7 V) in the amorphous InGaZnO 4 (a-IGZO)/YHZO/LSMO/STO FeTFTs. These FeTFTs demonstrate a consistent memory function with remarkable endurance (∼10 6 cycles) and retention (∼10 4 s). Furthermore, they sustain a constant memory window even under ±6 V bias stress for 10 4 s and exhibit excellent stability even under ±6 V/1 ms pulse cycling for 10 7 cycles. For comparison, a transistor with the same structure was fabricated using epitaxial nonferroelectric LaAlO 3 (LAO) and epitaxial undoped Hf 0.5 Zr 0.5 O 2 (HZO) as alternatives to YHZO. This study presents a novel approach to exploit the potential of YHZO in FeTFTs, contributing to the development of next-generation logic-in-memory.

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