1991
DOI: 10.1063/1.106405
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Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology

Abstract: We have demonstrated a new planarized all-refractory technology for low Tc superconductivity (PARTS). With the exception of the Nb-AlOx-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson j… Show more

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Cited by 108 publications
(40 citation statements)
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“…In Fg. (4) we plot the dependence of AI, at resonance on t,+ Assuming that the maximum RF current which can be delivered to the load is IJ2 at a junction spacing of AI2 (the array impedance is matched to the 10 Q load at this frequency) we find that (2) predicts (AI,)-= 215 pA at 120 GHz. This is almost a factor of two smaller than the largest measured RF current amplitude.…”
Section: Discussionmentioning
confidence: 98%
“…In Fg. (4) we plot the dependence of AI, at resonance on t,+ Assuming that the maximum RF current which can be delivered to the load is IJ2 at a junction spacing of AI2 (the array impedance is matched to the 10 Q load at this frequency) we find that (2) predicts (AI,)-= 215 pA at 120 GHz. This is almost a factor of two smaller than the largest measured RF current amplitude.…”
Section: Discussionmentioning
confidence: 98%
“…The thickness of Nb205 is estimated to be 20nm. The combination of dielectrics -anodized niobium plus the much thicker 300nm SiO, layer that follows -has two benefits: it is pinhole free, and the Nb,O, also seals the junctio'n mesa, reducing conduction pathways around the perimeter of the junction [8].…”
Section: Tri-layer Processingmentioning
confidence: 99%
“…Samples in group H were fabricated at Hypres. 12 Sample P was fabricated at IBM by a planarized all-refractory technology 13 ͑PARTS͒ and sample T was fabricated at MIT Lincoln Laboratories by a selective Nb anodization process ͑SNAP͒. 14 The lattice spacing p for the arrays ranges from about 10 to 20 m.…”
Section: Methodsmentioning
confidence: 99%