Subband and excitonic binding of graded GaAs/Ga1–xAlxAs quantum wells under an electric field

Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field

“…The quantum devices usually studied may consist of a single barrier, a quantum well or double barrier or multiple quantum well structures. These quantum devices are commonly taken to be symmetric, but the asymmetric quantum devices give new tunable properties which are very important for device applications [1][2][3][4][5][6][7][8]. The research on the linear and nonlinear optical properties of semiconductors has further been stimulated by the increasing number of applications of the semiconductor diode laser and optoelectronic components in communications and consumer electronics.…”

Electric field dependence of the excitonic properties in graded double quantum wells

“…In discussing the quasi-bound states, we use a novel method that we reported in our previous studies [26]. This involves the following.…”

“…ψ le (z e ) is the z-component of the normalized wave-function of the l e th electron (for the l h th hole this is replaced by ψ lh (z h )). These are obtained by using the method described in detail in [26]. The motion of the exciton in the x-y-plane is described by the wave function of the ground state of a two-dimensional hydrogen-like atom.…”

“…The radii of excitons in the x-y-plane are calculated by finding the variational parameter α (spatial extent of the exciton wave function) [26].…”