Subband and transport calculations in double n-type δ-doped quantum wells in Si

Rodrı́guez-Vargas, I.; Gaggero‐Sager, L. M.

doi:10.1063/1.2168024

Cited by 25 publications

(21 citation statements)

References 50 publications

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“…We have used standard parameters for n-and p-type Silicon [5,10]. The donor and acceptor concentrations varies from 1 × 10 12 cm −2 to 1 × 10 14 cm −2 .…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile the carrier concentration in this kind of systems is ultra high, the mobility is very low, which is opposite to the behavior in GaAs/AlGaAs systems [4]. An improvement in the conductivity not properly the mobility could be reach via the coupling of deltadoped layers [5]. The main proposal relies in finding the interwell distance at which the mobility is maximum in conjunction with the high carrier density coming from the two delta-doped planes, such that the conductivity -the product of the mobility and the carrier densityenhances [6].…”

Section: Introductionmentioning

confidence: 92%

“…For a single n-type δ-doped quantum well in Si centered at z = a the confining potential can be written as [5],…”

Section: Mathematical Methodsmentioning

confidence: 99%

“…For the mobility calculations we implement an empirical formula previously proposed and applied to n, p and p-n delta-doped systems [5,7,8],…”

Section: Mathematical Methodsmentioning

confidence: 99%

“…The ThomasFermi approximation and the effective mass theory are used in order to obtain the confining potential and the electron subband levels, respectively. Meanwhile the mobility calculations are performed via an empirical formula previously proposed and applied to n, p, and p-n delta-doped systems [5,7,8]. We find that the electron confinement plays an important role to optimize the mobility.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Ariza-Flores¹,

Rodrı́guez-Vargas²

2008

PIER Letters

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Abstract-The electronic structure and mobility trends in a n-type delta-doped quantum well in Si, matched between p-type delta-doped barriers of the same material, is presented. The distance between the n-type well and p-type barriers is varied from 50Å to 500Å; and also the impurity density from 5 × 10 12 cm −2 to 5 × 10 13 cm −2 , for both, donors and acceptors. An increase in the mobility by a factor of 1.6 at interwell distance of 50Å with donor and acceptor concentrations of 5 × 10 12 cm −2 and 5 × 10 13 cm −2 compared with a single delta-doped well without p-type barriers is found. This improvement in mobility could be attributed to a better confinement of carriers, which favors excited levels with nodes in the donor plane. This trade-off between carrier concentration and mobility could be exploited in high-speed, high-power and high-frequency applications.

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“…We have used standard parameters for n-and p-type Silicon [5,10]. The donor and acceptor concentrations varies from 1 × 10 12 cm −2 to 1 × 10 14 cm −2 .…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

“…For a single n-type δ-doped quantum well in Si centered at z = a the confining potential can be written as [5],…”

Section: Mathematical Methodsmentioning

confidence: 99%

“…For the mobility calculations we implement an empirical formula previously proposed and applied to n, p and p-n delta-doped systems [5,7,8],…”

Section: Mathematical Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Ariza-Flores¹,

Rodrı́guez-Vargas²

2008

PIER Letters

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Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects

Rojas-Briseño

Martı́nez-Orozco

Rodrı́guez-Vargas

et al. 2013

Phys. Status Solidi B

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p s s basic solid state physics b status solidi www.pss-b.com physica Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effectsThe effect of an externally applied static electric field on the nonlinear optical response in a GaAs asymmetric double δdoped quantum well is studied. The proposed structure bears a configuration including a Schottky barrier that can be tuned via a contact voltage. Using the effective mass approximation and a many-body Hartree-type Thomas-Fermi approximation for the confining conduction band profile, it can be shown that such a system could be of interest for a practical realization of a nonlinear optical responder. It is found that the influence of the static electric field can be used to suitably tuning the occurrence and position of the resonant optical signals in the far-infrared regime.1 Introduction Planar-doping or "δ-doping" is one of the processes of seeding a large amount of charge carriers in a semiconducting host material, looking for the generation of high conductivity strongly confined quasi-two-dimensional channels [1][2][3][4][5]. This can lead to an improvement of the electronic operation of devices that incorporate this particular kind of doping, as it is the case of field effect transistors. The first proposal of a δ-doped device was put forward by Schubert and Ploog [6] and consisted of a single δ-doped quantum well (DDQW) relatively close to a metal-semiconductor contact in what is called a MESFET structure. This design is now referred as a δ-doped field effect transistor (δ-doped-FET, or simply δ-FET).The δ-doped impurity-seeding profile gives rise to a kind of V -shaped potential quantum well (QW) in the conduction or valence band profiles, depending on the kind of doping (donor or acceptor atoms). The inclusion of a Schottky barrier in the design of a quantum confined structure containing a DDQW causes that the charge carriers that form the confined quasi-two-dimensional gas become affected by an electric field of intensity V c /d. Here, V c is the Schottky barrier height and d is the distance between the DDQW and the associated metal-semiconductor contact. Self-consistent as well as analytical models of a δ-FET have been put forward by 8]. In these works, the analytical description of the confining potential profile follows the lines of the so-called Thomas-Fermi approximation which was proposed by Ioriatti for the case of δ-doped systems [9].The nonlinear optical properties of quantum confined semiconducting systems have been the subject of study of many authors (for some of the earlier works, see Refs. [10,11]). In particular, double -and multiple -QWs are low-dimensional structures in which it is possible to obtain rather large values of the intersubband-related optical dipole moment [12]. This reflects in a significant enhancement of the nonlinear optical responses (see, for instance, the references [13][14][15][16][17][18][19][20][21][22][23][24]). The investigation on the linear and nonlinear o...

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High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

Rodríguez-Magdaleno

Martı́nez-Orozco

Rodrı́guez-Vargas

et al. 2015

Physica Status Solidi (b)

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In the framework of the effective mass approximation and using a Thomas–Fermi‐like model for the conduction band potential energy profile, the effects of hydrostatic pressure on the linear and nonlinear intersubband optical response of an asymmetric double δ‐doped quantum well are studied. In particular, the intersubband coefficients of light absorption and the relative refractive index change in the system were calculated. It is found that the pressure causes a redshift of the signal response as well as a reduction in the coefficients's amplitudes. We have also found that the asymmetry of the potential profile clearly affects the relative refractive index change because, as long as the system becomes more asymmetric, this physical property becomes diminished.

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Subband and transport calculations in double n-type δ-doped quantum wells in Si

Cited by 25 publications

References 50 publications

Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects

High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

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