Judiciously designed
two-dimensional THz metamaterials consisting
of resonant metallic structures embedded in a dielectric environment
locally enhance the electromagnetic field of an incident THz pulse
to values sufficiently high to cause nonlinear responses of the environment.
In semiconductors, the response is attributed to nonlinear transport
phenomena via intervalley scattering, impact ionization, or interband
tunneling and can affect the resonant behavior of the metallic structure,
which results, for instance, in mode switching. However, details of
mode switching, especially time scales, are still debated. By using
metallic split-ring resonators with nm-size gaps on intrinsic semiconductors
with different bandgaps, we identify the most relevant carrier generation
processes. In addition, by combining nonlinear THz time-domain spectroscopy
with simulations, we establish the fastest time constant for mode
switching to around hundred femtoseconds. Our results not only elucidate
dominant carrier generation mechanisms and dynamics but also pave
the route toward optically driven modulators with THz bandwidth.