We have investigated the current-voltage ͑CV͒ characteristics of the intrinsic Josephson junctions ͑IJJs͒ in the electron-doped high-T c superconductor Sm 2−x Ce x CuO 4−␦ by using a small mesa structure fabricated on a single crystal surface. It is found that multiple resistive branches, i.e., typical IJJ characteristics, are observed in the CV characteristics when the junction area of a mesa is 10 m 2 or less. It is also found that a typical Josephson critical current density J c is 7.5 kA/ cm 2 at 4.2 K for T c = 20.7 K. The Josephson penetration depth is experimentally estimated to be 1.0-1.6 m from the size dependence of J c . Both J c and T c are found to decrease with the carrier doping level, as is found for hole-doped Bi 2 Sr 2 CaCu 2 O 8+␦ in the heavily overdoped region. These results are discussed in relation to the current locking in terms of the coupled Josephson junction stack model.