Sublimation-based wafer-scale monolayer WS₂ formation via self-limited thinning of few-layer WS₂

Abstract

Atomically-thin monolayer WS2 is a promising channel material for next-generation Moore’s nanoelectronics owing to its high theoretical room temperature electron mobility and immunity to short channel effect. The high photoluminescence...

Ultraviolet Irradiation Stimulated NO2 Sensing Using WS2 Nanosheets Decorated with Au Nanoparticles

“…Such high operating temperatures not only lead to increased power consumption but also pose safety concerns in potentially explosive gas environments. − In this regard, achieving room-temperature detection of NO 2 is a challenging issue that must be addressed. Tungsten disulfide (WS 2 ) nanosheets (NSs), as one of the typical two-dimensional (2D) transition metal dichalcogenides (TMDs), have become ideal candidates for room-temperature gas sensors due to their large surface areas and high carrier mobilities at room temperature. − In addition, WS 2 NSs can be obtained via diverse preparation methods with excellent scalability, leading to wide applications in the fields of flexible and wearable devices. − The 2D structure of the WS 2 nanosheets offers a considerably expanded surface area, which facilitates a greater number of adsorption sites for gas molecules. However, the desorption of these adsorbed gas molecules becomes challenging due to the insufficient activation energy at room temperature.…”

Controllable Fabrication of Sub-10 nm Graphene Nanopores via Helium Ion Microscopy and DNA Detection

“…Garoli et al [26] used FIB to successfully prepare nanopores with a pore size of less than 10 nm on MoS 2 membranes and achieved high pAttern repeatability to prepare multi-point nanopores. Monolayer WS 2 has the same thickness as MoS 2 [27], but its photoluminescence (PL) quantum yield is higher than that of MoS 2 , which makes the application of WS 2 in optoelectronic devices possible [28]. Danda et al [22] used TEM electron beams to drill nanopores with a sub-5 nm aperture on WS 2 monolayers characterised by the PL spectrum and successfully identified various pore postures of double-stranded DNA.…”

A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors

“…1–6 TMDCs, with the general formula MX 2 (where M represents transition metals like Mo, W, Sn, Nb, Zr, and X denotes chalcogens such as S, Se, and Te), can be easily exfoliated into monolayers or few-layers, enabling bandgap tuning and utilization in various photosensitive devices. 7–10 While MoS 2 and WS 2 have been extensively studied and are more accessible, their limited abundance on Earth and complex synthesis processes raise costs, hindering their industrial-scale application in optoelectronics. To address these challenges, Tin dichalcogenide (SnS 2 ) emerges as a promising alternative due to its abundant and eco-friendly nature, coupled with excellent absorption coefficients in the UV-visible region and rapid diffusion rates of electron–hole pairs, showing immense potential in diverse photosensitive devices.…”