Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Hens, Philip; Jokubavičius, Valdas; Liljedahl, Rickard; Wagner, G.; Yakimova, Rositsa; Wellmann, Peter J.; Syväjärvi, Mikael

doi:10.1016/j.matlet.2011.09.109

Cited by 20 publications

(19 citation statements)

References 13 publications

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“…We have also considered the effect of surface steps on reaction rates. Such steps have been reported for example on the (100) surface of SiC grown on Si substrate [50][51][52]. To determine the role of these steps, we have also calculated the surface energy density for the (100) surfaces that contain steps.…”

Section: Corrosion On Different Surface Orientationsmentioning

confidence: 98%

Deciphering Water-Solid Reactions During Hydrothermal Corrosion of SiC

Xi,

Liu,

Morgan

et al. 2020

SSRN Journal

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Water-solid interfacial reactions are critical to understanding corrosion. More specifically, it is notoriously difficult to determine how water and solid interact beyond the initial chemisorption to induce the surface dissolution. Here, we report atomic-scale mechanisms of the elementary steps during SiC hydrothermal corrosion -from the initial surface attack to surface dissolution. We find that hydrogen scission reactions play a vital role in breaking Si-C bonds, regardless of the surface orientations. Stable silica layer does not form on the surface, but the newly identified chemical reactions on SiC are analogous to those observed during the dissolution of silica. SiC is dissolved directly into the water as soluble silicic acid. The rate of hydrothermal corrosion determined based on the calculated reaction activation energies is consistent with available experimental data. Our work sheds new light on understanding and interpreting the experimental observations and it provides foundation for design of materials that are resistant to corrosion in water.

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Section: Corrosion On Different Surface Orientationsmentioning

confidence: 98%

Deciphering Water-Solid Reactions During Hydrothermal Corrosion of SiC

Xi,

Liu,

Morgan

et al. 2020

SSRN Journal

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“…Originally, the sublimation epitaxy was developed for the growth of thick homoepitaxial 4H-or 6H-SiC layers (15). But then, it has been demonstrated in several studies that it can be adopted for the growth of 3C-SiC material (16)(17)(18)(19). The growth setup consists of inductively heated graphite crucible inserted in graphite insulation.…”

Section: Sublimation Epitaxymentioning

confidence: 99%

“…As shown in Fig. 3b, in addition to the original squared spacer opening (7x7mm 2 ) we explored the same square opening as the original one, but rotated by 45 degrees with respect to the [11][12][13][14][15][16][17][18][19][20] direction, as well as a circular one with a diameter of 7 mm. In both cases the area of the large terrace is reduced compared to the original spacer opening.…”

Section: Sublimation Epitaxymentioning

confidence: 99%

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Yakimova

Ivanov

Vines

et al. 2017

ECS J. Solid State Sci. Technol.

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Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H-or 4H-SiC) are still at the laboratory stage. There are several challenges in the control of polytype stability and formation of structural defects which have to be eliminated to reveal the full potential of this material. Nevertheless, 3C-SiC has been explored for various energy, environment and biomedical applications which significantly benefit from the intrinsic semiconductor properties of this material. The future of 3C-SiC and its applications depends on the advances which will be made in improving crystalline quality, enlarging crystal size and controlling doping levels which have not been entirely explored due to the lack of high quality 3C-SiC substrates. This paper reviews recent progress in growth and doping of thick 3C-SiC layers on hexagonal SiC substrates using sublimation epitaxy. It covers the growth process on off-axis substrates and defects occurrence, as well as the issue of obtaining high resistivity material.

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“…In addition a FWHM value of 78 arcsec has been measured for the (002) reflection rocking curve from thick 3C-SiC freestanding layers grown by sublimation method using CVD-grown 3C seeds 29 . We observe similar FWHM value (72 arcsec) for our 35 µm 3C-SiC epilayer (Fig.…”

Section: Iv2 Structural Analysismentioning

confidence: 99%

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Jacobson

Boulle

et al. 2014

ECS J. Solid State Sci. Technol.

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High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers

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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Cited by 20 publications

References 13 publications

Deciphering Water-Solid Reactions During Hydrothermal Corrosion of SiC

Deciphering Water-Solid Reactions During Hydrothermal Corrosion of SiC

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

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