Sublimation of a heavily boron-doped Si(111) surface

Homma, Yoshikazu; Hibino, Hiroki; Ogino, T.; Aizawa, Noriyuki

doi:10.1103/physrevb.58.13146

Cited by 33 publications

(16 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 The value of the activation energy, E 2 = E des − E dif = 2.56 eV, that we determine is also just a little larger than the result that was obtained earlier, 2.4 eV. 27 Our result for the sum E 1 + E 2 = E ad + E des = 4.09 eV, which represents the sublimation energy, is also in the vicinity of the earlier reported values of the sublimation energy, 4.3 eV ͑Ref. 27͒ and 4 eV ͑Ref.…”

Section: Island Decaymentioning

confidence: 42%

“…Steps on the Si͑111͒ ͑1 ϫ 1͒ surface, which are the subject of the investigations described here, have been studied widely 3,8,[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] due to their intriguing phenomenology. The Si͑111͒ surface undergoes a structural phase transition between ͑7 ϫ 7͒ and ͑1 ϫ 1͒ configurations at a transition temperature of T c = 1133 K. The step line tension is expected to be nearly isotropic on the Si͑111͒ ͑1 ϫ 1͒ surface above T c .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Step line tension and step morphological evolution on the Si(111)(1×1)surface

et al. 2008

View full text Add to dashboard Cite

The temperature dependence of the step line tension on the Si͑111͒ ͑1 ϫ 1͒ surface is determined from a capillary wave analysis of two-dimensional island edge fluctuations and straight step fluctuations that are observed with low energy electron microscopy. The line tension decreases by nearly 20% with a linear temperature coefficient of −0.14 meV/ Å K between 1145 and 1233 K. Temporal correlations of step fluctuations exhibit the distinctive signature in the wavelength dependence of the relaxation time of a terrace diffusion-limited mechanism for step motion. We also find that the role of desorption in island decay increases dramatically in the temperature range ͑1145-1380 K͒ that island decay is studied. Consequently, we generalize the current quasistatic model of island decay to take account of desorption. The evaluation of the island decay time with this model referenced to the temperature-dependent line tension accurately determines activation energies that are relevant to mass transport and sublimation.

show abstract

Section: Island Decaymentioning

confidence: 42%

Section: Introductionmentioning

confidence: 99%

Step line tension and step morphological evolution on the Si(111)(1×1)surface

et al. 2008

View full text Add to dashboard Cite

show abstract

“…Experiments for circular steps are not uncommon 14,15 and yet, very few theories currently exist that predict the onset of SB in circular steps ͑see Ref. 16, however, for a quasi-steady-state analysis͒.…”

mentioning

confidence: 99%

Unification of step bunching phenomena on vicinal surfaces

2007

View full text Add to dashboard Cite

We unify step bunching ͑SB͒ instabilities occurring under various conditions on crystal surfaces below roughening. We show that when attachment-detachment of atoms at step edges is the rate-limiting process, the SB of interacting, concentric circular steps is equivalent to the commonly observed SB of interacting straight steps under deposition, desorption, or drift. We derive a continuum Lagrangian partial differential equation, which is used to study the onset of instabilities for circular steps. These findings place on a common ground SB instabilities from numerical simulations for circular steps and experimental observations of straight steps. Recent advances in the fabrication of small devices such as quantum dots have motivated theoretical research into the fundamental properties of surfaces at the nanoscale. Below the roughening transition temperature, 1 the evolution of crystal surfaces is governed by the motion of steps. 2 This motion is important in understanding phenomena such as pattern formation 3 and the self-assembly of nanostructures. 4 One of the most commonly studied surface phenomena is step bunching ͑SB͒, where steps cluster together tightly into widely separated bunches. 5 This instability has been observed experimentally on many different systems, e.g., see Refs. 6-8 Most theoretical studies of SB have focused on the idealized situation with straight steps. 3,9,10 However, as surface features become smaller, the step curvature should play an increasingly important role. 11 Therefore, a realistic model of step bunching must include both the effects of step curvature and step interactions. 1 Experimentally, the most common way to induce SB is to heat the surface using a direct current. 12 The resulting instability in straight steps has been understood on the basis of an asymmetry in the adatom density caused by a preferential drift. 13 However, the equivalent phenomenon in circular steps has received much less attention. Experiments for circular steps are not uncommon 14,15 and yet, very few theories currently exist that predict the onset of SB in circular steps ͑see Ref. 16, however, for a quasi-steady-state analysis͒.In this Brief Report, we discuss how curvature differences from one step to another can also induce a drift and, thus, give rise to SB. The main result is the derivation of a reduced partial differential equation ͑PDE͒, Eq. ͑12͒ below, which captures this effect and is able to predict the onset of SB instabilities for relaxing circular steps. We therefore unify SB phenomena in straight and circular steps by showing that they have a common physical and mathematical basis. In particular, our approach demonstrates that the effect of step line tension on SB is equivalent to that of a drift or of desorption and/or material deposition in the presence of a difference in the kinetic rates at step edges. This equivalence is shown by treating the step index as a continuum variable. 17 In the resulting PDEs for the step positions, the step line tension and the physical effects described ...

show abstract

“…For increasing temperatures the mean-step spacing decreases, because the diffusion length decreases, and therefore the critical terrace diameter for new step nucleation decreases [7,12]. At a transition temperature of ϳ1200 ± C [7,12,13], the mean-step spacing almost triples, before decreasing again with the increasing temperature. By choosing a step spacing small enough to ensure that two or more nucleation sites formed on one ultraflat terrace, it was possible to cause destructive step collisions.…”

Section: Nt T Basic Research Laboratories 3-1 Morinosato-wakamiya Amentioning

confidence: 90%

Dynamics, Interactions, and Collisions of Atomic Steps on Si(111) in Sublimation

Finnie

Homma

1999

Phys. Rev. Lett.

View full text Add to dashboard Cite

The dynamics of atomic steps and the interactions between them were observed by in situ scanning electron microscopy for the sublimation of a Si(111) surface which was atomically flat on a large ͑ϳ100 mm 3 50 mm͒ scale. Newly nucleated widely spaced steps moved at a constant velocity. For more narrowly spaced steps, diffusion mediated step-step interactions reduced the step velocity. To further probe these interactions, steps were made to collide. In destructive collisions, steps decelerated and flattened. In constructive collisions double atomic steps were produced. [S0031-9007(99)08702-5]

show abstract

Sublimation of a heavily boron-doped Si(111) surface

Cited by 33 publications

References 25 publications

Step line tension and step morphological evolution on the Si(111)(1×1)surface

Step line tension and step morphological evolution on the Si(111)(1×1)surface

Unification of step bunching phenomena on vicinal surfaces

Dynamics, Interactions, and Collisions of Atomic Steps on Si(111) in Sublimation

Contact Info

Product

Resources

About