1974
DOI: 10.1109/tmag.1974.1058398
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Submicron bubble domain device design

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Cited by 19 publications
(3 citation statements)
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“…6. However the H,./ 41TM values for the amorphous films are only 0.1 % for I 0.05, and are not expected to pose any problem for T-I bar type devices in which the predominant term defining the minimum propagation field is due to the magnetization of the film [8,9]. The higher coercivities could be of concern in other devices.…”
Section: Coercivity and Mobilitymentioning
confidence: 97%
See 1 more Smart Citation
“…6. However the H,./ 41TM values for the amorphous films are only 0.1 % for I 0.05, and are not expected to pose any problem for T-I bar type devices in which the predominant term defining the minimum propagation field is due to the magnetization of the film [8,9]. The higher coercivities could be of concern in other devices.…”
Section: Coercivity and Mobilitymentioning
confidence: 97%
“…4. In general, minimizing the power required to propagate the bubbles requires minimizing the coercivity He' However, in T-I bar type devices the lowest practical rotating field for bubble propagation depends strongly on M as a result of interbar gaps [8,9]. Thus propagating power is negligibly increased even if He is as large as one percent of 41rM.…”
Section: General Considerationsmentioning
confidence: 99%
“…2, assure propagation of the bubble across the gap and satisfy certain upper and lower bounds on the circuit parameters. Both sand HT are allowed to vary in the ranges: 0.05 < s S. 0.45 ~m 1200 ~ HT S. 5000 Aim (7 ) (8) while all the other parameters are kept fixed at the values shown in Fig. 2.…”
Section: Quasistatic Operation With a Bias Margin Of About 2400mentioning
confidence: 99%